Inorganic vacancy-ordered perovskite Cs2SnCl6:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection

Shao, Dali; Zhu, Weiguang; Xin, Guoqing; Lian, Jie; Sawyer, Shayla

doi:10.1063/1.5123226

Inorganic vacancy-ordered perovskite Cs₂SnCl₆:Bi/GaN heterojunction photodiode for narrowband, visible-blind UV detection

Journal Article · Tue Sep 17 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5123226· OSTI ID:1612667

^[1]; ^[2]; Xin, Guoqing ^[2]; Lian, Jie ^[2]; Sawyer, Shayla ^[2]

Rensselaer Polytechnic Inst., Troy, NY (United States); DOE/OSTI
Rensselaer Polytechnic Inst., Troy, NY (United States)

In this work, a heterojunction photodiode was fabricated from Bi doped Cs₂SnCl₆ nanoparticles (Cs₂SnCl₆:Bi NPs) spin-coated on an epitaxially grown GaN substrate. With the back illumination configuration, the heterojunction photodiode demonstrated excellent narrow-band UV sensing capability with a full wavelength of half maximum of 18 nm and a maximum detectivity of 1.2 × 10¹² jones, which is promising for biomedical applications. In addition to the excellent narrow band UV sensitivity, the device also demonstrated a large linear dynamic range of 71 decibels (dB) and a fast photoresponse speed (a rise time of 0.75 μs and a fall time of 0.91 μs). The excellent performance is attributed to excellent carrier separation efficiency at the heterojunction interface and improved carrier collection efficiency through the multi-walled carbon nanotube (MWCNT) network. All the above advantages are of great importance for commercial deployment of perovskite-based photodetectors.

View Accepted Manuscript (DOE)

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Performance and Design of Nuclear Waste Forms and Containers (WastePD); Rensselaer Polytechnic Inst., Troy, NY (United States); The Ohio State Univ., Columbus, OH (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0016584

OSTI ID:: 1612667

Alternate ID(s):: OSTI ID: 1865542
OSTI ID: 1562336

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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A high performance UV–visible dual-band photodetector based on an inorganic Cs ₂ SnI ₆ perovskite/ZnO heterojunction structure Shao, Dali; Zhu, Weiguang; Xin, Guoqing Journal of Materials Chemistry C, Vol. 8, Issue 5 https://doi.org/10.1039/c9tc05940g	journal	January 2020

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