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Thermal conductivity of MoS2 monolayers from molecular dynamics simulations

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.5085336· OSTI ID:1612245

Quantification of lattice thermal conductivity of two-dimensional semiconductors like MoS2 is necessary for the design of electronic and thermoelectric devices, but direct experimental measurements on free-standing samples is challenging. Molecular dynamics simulations, with appropriate corrections, can provide a reference value for thermal conductivity for these material systems. Here, we construct a new empirical forcefield of the Stillinger-Weber form, parameterized to phonon dispersion relations, lattice constants and elastic moduli and we use it to compute a material-intrinsic thermal conductivity of 38.1 W/m-K at room temperature and estimate a maximum thermal conductivity of 85.4 W/m-K at T = 200 K. We also identify that phonon scattering by the large isotopic mass distribution of Mo and S contributes a significant correction (>45%) to the thermal conductivity at low temperatures.

Research Organization:
Univ. of Southern California, Los Angeles, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0014607
OSTI ID:
1612245
Alternate ID(s):
OSTI ID: 1503376
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 3 Vol. 9; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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