Engineering Magnetic Transitions in Fe 1–x Sn x Bi 2 Se 4 n-Type Ferromagnetic Semiconductors through Chemical Manipulation of Spatial Separation between Magnetic Centers
Journal Article
·
· Chemistry of Materials
- Division of Science, Mathematics and Technology, Governors State University, University Park, Illinois 60484, United States
Not provided.
- Research Organization:
- Univ. of Michigan, Ann Arbor, MI (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0008574; SC0018941
- OSTI ID:
- 1611082
- Journal Information:
- Chemistry of Materials, Vol. 31, Issue 9; ISSN 0897-4756
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Indium Preferential Distribution Enables Electronic Engineering of Magnetism in FeSb2–xInxSe4 p-Type High-Tc Ferromagnetic Semiconductors
Charge Disproportionation Triggers Bipolar Doping in FeSb 2–x Sn x Se 4 Ferromagnetic Semiconductors, Enabling a Temperature-Induced Lifshitz Transition
Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film
Journal Article
·
Fri Nov 11 00:00:00 EST 2016
· Chemistry of Materials
·
OSTI ID:1611082
+7 more
Charge Disproportionation Triggers Bipolar Doping in FeSb 2–x Sn x Se 4 Ferromagnetic Semiconductors, Enabling a Temperature-Induced Lifshitz Transition
Journal Article
·
Fri May 10 00:00:00 EDT 2019
· Journal of the American Chemical Society
·
OSTI ID:1611082
+6 more
Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film
Journal Article
·
Thu Aug 15 00:00:00 EDT 2019
· Journal of Superconductivity and Novel Magnetism
·
OSTI ID:1611082
+9 more