In situ laser reflectivity to monitor and control the nucleation and growth of atomically thin 2D materials*

Puretzky, Alexander; Lin, Yu-Chuan; Liu, Chenze; Strasser, Alexander M.; Yu, Yiling; Canulescu, Stela; Rouleau, Christopher; Xiao, Kai; Duscher, Gerd; Geohegan, David

doi:10.1088/2053-1583/ab7a72

In situ laser reflectivity to monitor and control the nucleation and growth of atomically thin 2D materials*

Journal Article · Thu Mar 19 00:00:00 EDT 2020 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ab7a72· OSTI ID:1608207

^[1]; ^[1]; Liu, Chenze ^[2]; Strasser, Alexander M. ^[3]; ^[1]; ^[4]; ^[1]; ^[1]; Duscher, Gerd ^[5]; ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
Texas A & M Univ., College Station, TX (United States)
Technical Inst. of Denmark, Lyngby (Denmark)
Univ. of Tennessee, Knoxville, TN (United States)

The growth of atomically thin two-dimensional (2D) layered and other quantum materials is typically performed without in situ monitoring or control. Here, a simple laser reflectivity approach is demonstrated to provide in situ control over sub-monolayer thickness and growth kinetics during pulsed laser deposition (PLD) of MoSe₂ layers. First, the general technique is presented with emphasis on designing the maximum sensitivity of the optical contrast through consideration of Fresnel's equations with proper choice of layer thickness, substrate, and laser monitoring wavelength, incidence angle, and laser polarization. Then the 632.8 nm optical reflectivity of MoSe₂ layers on SiO₂/Si substrates was predicted and compared with in situ monitoring of MoSe₂ growth by PLD under actual growth conditions using a probe HeNe laser beam. The measurements showed high sensitivity and excellent agreement with MoSe₂ surface coverages calculated from atomic resolution STEM analysis of 2D layers deposited in arrested growth experiments. Finally, growth kinetics revealed by these measurements showed sigmoidal nucleation and growth stages in the formation of the 2D MoSe₂ layers that are described by a simple model, indicating the promise of the laser reflectivity technique for in situ monitoring and control of 2D materials deposition.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1608207

Alternate ID(s):: OSTI ID: 23023450

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 2 Vol. 7; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

2D materials
36 MATERIALS SCIENCE
MoSe2
in situ reflectivity
kinetic modeling
pulsed laser deposition (PLD)

In situ laser reflectivity to monitor and control the nucleation and growth of atomically thin 2D materials*

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