Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes

Aragon, Andrew; Monavarian, Morteza; Stricklin, Isaac; Pickrell, Greg; Crawford, Mary; Allerman, Andrew; Armstrong, Andrew M.; Feezell, Daniel

doi:10.1002/pssa.201900757

Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes

Journal Article · Mon Dec 09 23:00:00 EST 2019 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.201900757· OSTI ID:1605717

^[1]; Monavarian, Morteza ^[1]; Stricklin, Isaac ^[1]; Pickrell, Greg ^[2]; Crawford, Mary ^[2]; Allerman, Andrew ^[2]; Armstrong, Andrew M. ^[2]; Feezell, Daniel ^[1]

Univ. of New Mexico, Albuquerque, NM (United States). Center for High-Technology Materials
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Impacts of silicon, carbon, and oxygen interfacial impurities on the performance of high-voltage vertical GaN-based p–n diodes are investigated. The results indicate that moderate levels (≈5 × 10¹⁷ cm^-3) of all interfacial impurities lead to reverse blocking voltages (V_b) greater than 200 V at 1 μA cm^-2 and forward leakage of less than 1 µA cm^-2 at 1.7 V. At higher interfacial impurity levels, the performance of the diodes becomes compromised. Herein, it is concluded that each impurity has a different effect on the device performance. For example, a high carbon spike at the junction correlates with high off-state leakage current in forward bias (≈100× higher forward leakage current compared with a reference diode), whereas the reverse bias behavior is not severely affected (> 200 V at 1 μA cm^-2). High silicon and oxygen spikes at the junction strongly affect the reverse leakage currents (≈ 1–10 V at 1 μA cm^-2). Regrown diodes with impurity (silicon, oxygen, and carbon) levels below 5 × 10¹⁷ cm^-3 show comparable forward and reverse results with the reference continuously grown diodes. The effect of the regrowth interface position relative to the metallurgical junction on the diode performance is also discussed.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1605717

Alternate ID(s):: OSTI ID: 1580285

Report Number(s):: SAND--2020-2474J; 684316

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Issue: 7 Vol. 217; ISSN 1862-6300

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
GaN
interfacial impurities
nonpolar
power electronics
p–n diodes

Interfacial Impurities and Their Electronic Signatures in High-Voltage Regrown Nonpolar m-Plane GaN Vertical p–n Diodes

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