High-voltage regrown nonpolar m-plane vertical p-n diodes: A step toward future selective-area-doped power switches

Journal Article · Thu Feb 28 23:00:00 EST 2019 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/LED.2019.2892345· OSTI ID:1490815

Monavarian, M. ^[1]; Pickrell, G.; Aragon, A. A.; Stricklin, I.; Crawford, M. H.; Allerman, A. A.; Celio, K. C.; Leonard, F.; Talin, A. A.; Armstrong, A. M.; Feezell, D.

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1. University of New Mexico

Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×10¹⁷ cm^-3, which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm² at 300 A/cm², and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×10¹⁷ cm^-3, 8×10¹⁷ cm^-3, and 1×10¹⁹ cm^-3, respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• Grant/Contract Number: AR0000869
• OSTI ID: 1490815
• Alternate ID(s): OSTI ID: 1492795
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 3 Vol. 40; ISSN 0741-3106
• Publisher: IEEE
• Country of Publication: United States
• Language: English

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