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Title: Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors

Journal Article · · Journal of Low Temperature Physics
ORCiD logo [1];  [2];  [3];  [4];  [3];  [2];  [5];  [3];  [2];  [2];  [2];  [1];  [2];  [1];  [6]
  1. Stanford Univ., CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC)
  4. Stanford Univ., CA (United States). Dept. of Physics and Kavli Inst. for Particle Astrophysics and Cosmology (KIPAC); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  6. Santa Clara Univ., Santa Clara, CA (United States)
+ Show Author Affiliations

Herein a model for charge trapping and impact ionization and an experiment to measure these parameters are presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also described. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
Sponsoring Organization:
National Science foundation (NSF); USDOE Office of Science (SC), High Energy Physics (HEP)
Grant/Contract Number:
AC02-76SF00515; AC02-07CH11359
OSTI ID:
1605192
Journal Information:
Journal of Low Temperature Physics, Vol. 199; ISSN 0022-2291
Publisher:
SpringerCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

References (12)

Voltage‐assisted calorimetric ionization detector journal December 1988
Thermal detection of single e-h pairs in a biased silicon crystal detector journal January 2018
Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD journal September 2017
Energy-Resolved Measurements of the Phonon-Ionization of D − and A + Centers in Silicon with Superconducting-Al Tunnel Junctions journal November 1984
Dark light, dark matter, and the misalignment mechanism journal November 2011
Searching for ϵ charges and a new U(1) journal September 1986
A method to define the energy threshold depending on noise level for rare event searches
  • Mancuso, M.; Bento, A.; Iachellini, N. Ferreiro
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 940 https://doi.org/10.1016/j.nima.2019.06.030
journal October 2019
Direct detection of sub-GeV dark matter journal April 2012
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector journal August 2018
Thermal detection of single e-h pairs in a biased silicon crystal detector text January 2017
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector text January 2018
Electronic structure of copper, silver, and gold impurities in silicon journal July 1985

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Related Subjects

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Electron
Hole
e−h+ pairs
Quantization
Phonons
Quasiparticles
Silicon
Superconducting TES
Impact ionization
Charge trapping