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Title: Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors

Journal Article · · Physical Review D
ORCiD logo [1];  [1]; ORCiD logo [1];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [3]; ORCiD logo [3];  [4];  [5]; ORCiD logo [6]
  1. Stanford Univ., CA (United States). Dept. of Physics
  2. Univ. of California, Berkeley, CA (United States). Dept. of Physics
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., CA (United States). Dept. of Physics
  5. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
  6. Santa Clara Univ., Santa Clara, CA (United States)
+ Show Author Affiliations

A 0.93 g 1×1×0.4 cm3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP); National Science Foundation (NSF)
Grant/Contract Number:
AC02-07CH11359; AC02-76SF00515
OSTI ID:
1604762
Alternate ID(s):
OSTI ID: 1574976; OSTI ID: 1599668
Report Number(s):
arXiv:1910.02162; FERMILAB-PUB-19-556-AE; PRVDAQ; TRN: US2104333
Journal Information:
Physical Review D, Vol. 101, Issue 3; ISSN 2470-0010
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

References (8)

Voltage‐assisted calorimetric ionization detector journal December 1988
Thermal detection of single e-h pairs in a biased silicon crystal detector journal January 2018
Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD journal September 2017
Dark light, dark matter, and the misalignment mechanism journal November 2011
Searching for ϵ charges and a new U(1) journal September 1986
Direct detection of sub-GeV dark matter journal April 2012
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector journal August 2018
Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors journal February 2020

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