Electric Field-Controlled Magnetization in GaAs/AlGaAs Heterostructures–Chiral Organic Molecules Hybrids

Smolinsky, Eilam Z.  B.; Neubauer, Avner; Kumar, Anup; Yochelis, Shira; Capua, Eyal; Carmieli, Raanan; Paltiel, Yossi; Naaman, Ron; Michaeli, Karen

doi:10.1021/acs.jpclett.9b00092

Electric Field-Controlled Magnetization in GaAs/AlGaAs Heterostructures–Chiral Organic Molecules Hybrids

Journal Article · Wed Feb 20 00:00:00 EST 2019 · Journal of Physical Chemistry Letters

DOI:https://doi.org/10.1021/acs.jpclett.9b00092· OSTI ID:1604757

Smolinsky, Eilam Z. B. ^[1]; Neubauer, Avner ^[2]; Kumar, Anup ^[3]; Yochelis, Shira ^[2]; ^[3]; Carmieli, Raanan ^[3]; Paltiel, Yossi ^[2]; ^[3]; Michaeli, Karen ^[3]

Weizmann Inst. of Science, Rehovot (Israel); University of Pittsburgh
Hebrew Univ. of Jerusalem (Israel)
Weizmann Inst. of Science, Rehovot (Israel)

Here, we study GaAs/AlGaAs devices hostinga two-dimensional electron gas and coated with a monolayer of chiral organic molecules.We observe clear signatures of room temperature magnetism, which is induced in these systems by applying a gate voltage. We explain this phenomenon as a consequence of the spin-polarized charges that are injectedinto the semiconductor through the chiral molecules. The orientation of the magnetic moment can be manipulated by low gate voltages, with a switching ratein the MHz range. Therefore, our devices implement an efficient, electric field controlled magnetization, which has long been desired for their technical prospects.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Pittsburgh, PA (United States)

Sponsoring Organization:: Israel Science Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46430

OSTI ID:: 1604757

Journal Information:: Journal of Physical Chemistry Letters, Journal Name: Journal of Physical Chemistry Letters Journal Issue: 5 Vol. 10; ISSN 1948-7185

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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