Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

Shi, Wu; Kahn, Salman; Jiang, Lili; Wang, Sheng-Yu; Tsai, Hsin-Zon; Wong, Dillon; Taniguchi, Takashi; Watanabe, Kenji; Wang, Feng; Crommie, Michael F.; Zettl, Alex

doi:10.1038/s41928-019-0351-x

Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

Journal Article · Sun Jan 19 23:00:00 EST 2020 · Nature Electronics

DOI:https://doi.org/10.1038/s41928-019-0351-x· OSTI ID:1603604

^[1]; ^[1]; Jiang, Lili ^[1]; Wang, Sheng-Yu ^[2]; Tsai, Hsin-Zon ^[1]; Wong, Dillon ^[1]; Taniguchi, Takashi ^[3]; ^[3]; ^[1]; Crommie, Michael F. ^[1]; ^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoScience Inst., Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
National Inst. for Materials Science, Tsukuba (Japan)

A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating. However, conventional electrostatic gating has limitations, including a maximum carrier density set by the dielectric breakdown, and ionic liquid gating and direct chemical doping also suffer from drawbacks. In this work, we show that an electron-beam-induced doping technique can be used to reversibly write high-resolution doping patterns in hexagonal boron nitride-encapsulated graphene and molybdenum disulfide (MoS₂) van der Waals heterostructures. The doped MoS₂ device exhibits an order of magnitude decrease of subthreshold swing compared with the device before doping, whereas the doped graphene devices demonstrate a previously inaccessible regime of high carrier concentration and high mobility, even at room temperature. We also show that the approach can be used to write high-quality p–n junctions and nanoscale doping patterns, illustrating that the technique can create nanoscale circuitry in van der Waals heterostructures.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1603604

Journal Information:: Nature Electronics, Journal Name: Nature Electronics Journal Issue: 2 Vol. 3; ISSN 2520-1131

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

References (36)

Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation Iqbal, Muhammad Zahir; Anwar, Nadia; Siddique, Salma Optical Materials, Vol. 69 https://doi.org/10.1016/j.optmat.2017.04.041	journal	July 2017
Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures Velasco, Jairo; Ju, Long; Wong, Dillon Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b04441	journal	February 2016
Gate-Tunable Atomically Thin Lateral MoS ₂ Schottky Junction Patterned by Electron Beam Katagiri, Y.; Nakamura, T.; Ishii, A. Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b01186	journal	May 2016
Controlled Electrochemical Intercalation of Graphene/ h- BN van der Waals Heterostructures Zhao, S. Y. Frank; Elbaz, Giselle A.; Bediako, D. Kwabena Nano Letters, Vol. 18, Issue 1 https://doi.org/10.1021/acs.nanolett.7b04396	journal	December 2017
Molecular Arrangement and Charge Transfer in C ₆₀ /Graphene Heterostructures Ojeda-Aristizabal, Claudia; Santos, Elton J. G.; Onishi, Seita ACS Nano, Vol. 11, Issue 5 https://doi.org/10.1021/acsnano.7b00551	journal	April 2017
Tunable Superlattice in Graphene To Control the Number of Dirac Points Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K. Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl4006029	journal	August 2013
Four-Terminal Magneto-Transport in Graphene p-n Junctions Created by Spatially Selective Doping Lohmann, Timm; von Klitzing, Klaus; Smet, Jurgen H. Nano Letters, Vol. 9, Issue 5 https://doi.org/10.1021/nl900203n	journal	May 2009
Disorder engineering and conductivity dome in ReS2 with electrolyte gating Ovchinnikov, Dmitry; Gargiulo, Fernando; Allain, Adrien Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12391	journal	August 2016
Photoinduced doping in heterostructures of graphene and boron nitride Ju, L.; Velasco, J.; Huang, E. Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.60	journal	April 2014
Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy Wong, Dillon; Velasco, Jairo; Ju, Long Nature Nanotechnology, Vol. 10, Issue 11 https://doi.org/10.1038/nnano.2015.188	journal	August 2015
Observation of an electrically tunable band gap in trilayer graphene Lui, Chun Hung; Li, Zhiqiang; Mak, Kin Fai Nature Physics, Vol. 7, Issue 12 https://doi.org/10.1038/nphys2102	journal	September 2011
Isospin Pomeranchuk effect in twisted bilayer graphene Saito, Yu; Yang, Fangyuan; Ge, Jingyuan Nature, Vol. 592, Issue 7853 https://doi.org/10.1038/s41586-021-03409-2	journal	April 2021
Designing artificial 2D crystals with site and size controlled quantum dots Xie, Xuejun; Kang, Jiahao; Cao, Wei Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/s41598-017-08776-3	journal	August 2017
Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation Yu, Xuechao; Shen, Youde; Liu, Tao Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep12014	journal	July 2015
Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating Shi, Wu; Ye, Jianting; Zhang, Yijin Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep12534	journal	August 2015
Programmable graphene doping via electron beam irradiation Zhou, Yangbo; Jadwiszczak, Jakub; Keane, Darragh Nanoscale, Vol. 9, Issue 25 https://doi.org/10.1039/C7NR03446F	journal	January 2017
Ambipolar remote graphene doping by low-energy electron beam irradiation Stará, Veronika; Procházka, Pavel; Mareček, David Nanoscale, Vol. 10, Issue 37 https://doi.org/10.1039/C8NR06483K	journal	January 2018
Hole and electron transport in SiO ₂ films Curtis, O. L.; Srour, J. R.; Chiu, K. Y. Journal of Applied Physics, Vol. 45, Issue 10 https://doi.org/10.1063/1.1663079	journal	October 1974
Modification of graphene properties due to electron-beam irradiation Teweldebrhan, D.; Balandin, A. A. Applied Physics Letters, Vol. 94, Issue 1 https://doi.org/10.1063/1.3062851	journal	January 2009
Effect of electron-beam irradiation on graphene field effect devices Childres, Isaac; Jauregui, Luis A.; Foxe, Michael Applied Physics Letters, Vol. 97, Issue 17 https://doi.org/10.1063/1.3502610	journal	October 2010
Phonon-limited electron mobility in graphene calculated using tight-binding Bloch waves Sule, N.; Knezevic, I. Journal of Applied Physics, Vol. 112, Issue 5 https://doi.org/10.1063/1.4747930	journal	September 2012
Electron−hole pair creation energy in SiO ₂ Ausman, G. A.; McLean, F. B. Applied Physics Letters, Vol. 26, Issue 4 https://doi.org/10.1063/1.88104	journal	February 1975
Accessing the transport properties of graphene and its multilayers at high carrier density Ye, Jianting; Craciun, Monica F.; Koshino, Mikito Proceedings of the National Academy of Sciences, Vol. 108, Issue 32 https://doi.org/10.1073/pnas.1018388108	journal	July 2011
Carrier Localization on Surfaces of Organic Semiconductors Gated with Electrolytes Xia, Yu; Xie, Wei; Ruden, P. Paul Physical Review Letters, Vol. 105, Issue 3 https://doi.org/10.1103/PhysRevLett.105.036802	journal	July 2010
Transport Measurements Across a Tunable Potential Barrier in Graphene Huard, B.; Sulpizio, J. A.; Stander, N. Physical Review Letters, Vol. 98, Issue 23 https://doi.org/10.1103/PhysRevLett.98.236803	journal	June 2007
Electronic Transport and Quantum Hall Effect in Bipolar Graphene p − n − p Junctions Özyilmaz, Barbaros; Jarillo-Herrero, Pablo; Efetov, Dmitri Physical Review Letters, Vol. 99, Issue 16 https://doi.org/10.1103/PhysRevLett.99.166804	journal	October 2007
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene Williams, J. R.; DiCarlo, L.; Marcus, C. M. Science, Vol. 317, Issue 5838 https://doi.org/10.1126/science.1144657	journal	August 2007
One-Dimensional Electrical Contact to a Two-Dimensional Material Wang, L.; Meric, I.; Huang, P. Y. Science, Vol. 342, Issue 6158 https://doi.org/10.1126/science.1244358	journal	October 2013
Effect of electron-beam irradiation on graphene field effect devices Childres, Isaac; Jauregui, Luis A.; Foxe, Mike arXiv https://doi.org/10.48550/arxiv.1008.4561	text	January 2010
Accessing the transport properties of graphene and its multi-layers at high carrier density Ye, J. T.; Craciun, M. F.; Koshino, M. arXiv https://doi.org/10.48550/arxiv.1010.4679	text	January 2010
Tunable Superlattice in Graphene To Control the Number of Dirac Points Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K. arXiv https://doi.org/10.48550/arxiv.1309.4653	text	January 2013
Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures Velasco, Jairo; Ju, Long; Wong, Dillon arXiv https://doi.org/10.48550/arxiv.1602.03245	text	January 2016
Disorder engineering and conductivity dome in ReS2 with electrolyte gating Ovchinnikov, Dmitry; Gargiulo, Fernando; Allain, Adrien arXiv https://doi.org/10.48550/arxiv.1608.08765	text	January 2016
Programmable graphene doping via electron beam irradiation Zhou, Yangbo; Jadwiszczak, Jakub; Keane, Darragh arXiv https://doi.org/10.48550/arxiv.1611.04984	preprint	January 2016
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S.; Geim, A. K.; Morozov, S. V. arXiv https://doi.org/10.48550/arxiv.cond-mat/0410550	text	January 2004

Similar Records

Nanoscale electrostatic control in ultraclean van der Waals heterostructures by local anodic oxidation of graphite gates

Journal Article · Mon Jun 26 00:00:00 EDT 2023 · Nature Physics · OSTI ID:2323295

Heterostructures based on inorganic and organic van der Waals systems

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · APL Materials · OSTI ID:22303565

Related Subjects

36 MATERIALS SCIENCE
electronic properties and materials
two-dimensional materials

Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

Citation Formats

References (36)

Similar Records

Related Subjects