Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

Shi, Wu; Kahn, Salman; Jiang, Lili; Wang, Sheng-Yu; Tsai, Hsin-Zon; Wong, Dillon; Taniguchi, Takashi; Watanabe, Kenji; Wang, Feng; Crommie, Michael F.; Zettl, Alex

doi:10.1038/s41928-019-0351-x

Title: Reversible writing of high-mobility and high-carrier-density doping patterns in two-dimensional van der Waals heterostructures

Journal Article · Mon Jan 20 00:00:00 EST 2020 · Nature Electronics

DOI:https://doi.org/10.1038/s41928-019-0351-x· OSTI ID:1603604

^[1];

^[1]; Jiang, Lili ^[1]; Wang, Sheng-Yu ^[2]; Tsai, Hsin-Zon ^[1]; Wong, Dillon ^[1]; Taniguchi, Takashi ^[3];

^[3];

^[1]; Crommie, Michael F. ^[1];

^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoScience Inst., Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
National Inst. for Materials Science, Tsukuba (Japan)

A key feature of two-dimensional materials is that the sign and concentration of their carriers can be externally controlled with techniques such as electrostatic gating. However, conventional electrostatic gating has limitations, including a maximum carrier density set by the dielectric breakdown, and ionic liquid gating and direct chemical doping also suffer from drawbacks. In this work, we show that an electron-beam-induced doping technique can be used to reversibly write high-resolution doping patterns in hexagonal boron nitride-encapsulated graphene and molybdenum disulfide (MoS₂) van der Waals heterostructures. The doped MoS₂ device exhibits an order of magnitude decrease of subthreshold swing compared with the device before doping, whereas the doped graphene devices demonstrate a previously inaccessible regime of high carrier concentration and high mobility, even at room temperature. We also show that the approach can be used to write high-quality p–n junctions and nanoscale doping patterns, illustrating that the technique can create nanoscale circuitry in van der Waals heterostructures.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)

Grant/Contract Number:: AC02-05CH11231; 1542741; 1807233

OSTI ID:: 1603604

Journal Information:: Nature Electronics, Vol. 3, Issue 2; ISSN 2520-1131

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 41 works

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