Synthesis of Co‐Doped MoS 2 Monolayers with Enhanced Valley Splitting
- School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore
- National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305–8565 Japan, Department of Physics Southern University of Science and Technology Shenzhen 518055 China
- Department of Physics and Astronomy Vanderbilt University Nashville TN 37235 USA, Materials Science and Technology Division Oak Ridge National Lab Oak Ridge TN 37831 USA
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore, College of electronic information and optical engineering Nankai University Tianjin 300350 China
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore, State Key Laboratory of ASIC &, System School of Information Science and Technology Fudan University Shanghai 200433 P. R. China
- Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore
- National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba 305–8565 Japan
- Department of Mechanical Engineering and Materials Science and Institute of Materials Science and Engineering Washington University in St. Louis St. Louis MO 63130 USA
- School of Electronic Electrical and Communication Engineering University of Chinese Academy of Science Beijing 100049 China, CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing 100049 China
- School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore, Centre for Micro‐/Nano‐electronics (NOVITAS) School of Electrical &, Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore, CINTRA CNRS/NTU/THALES UMI 3288 Research Techno Plaza 50 Nanyang Drive, Border X Block, Level 6 Singapore 637553 Singapore
- CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing 100049 China, School of Physical Sciences and CAS Key Laboratory of Vacuum Sciences University of Chinese Academy of Sciences Beijing 100049 China
Internal magnetic moments induced by magnetic dopants in MoS 2 monolayers are shown to serve as a new means to engineer valley Zeeman splitting (VZS). Specifically, successful synthesis of monolayer MoS 2 doped with the magnetic element Co is reported, and the magnitude of the valley splitting is engineered by manipulating the dopant concentration. Valley splittings of 3.9, 5.2, and 6.15 meV at 7 T in Co‐doped MoS 2 with Co concentrations of 0.8%, 1.7%, and 2.5%, respectively, are achieved as revealed by polarization‐resolved photoluminescence (PL) spectroscopy. Atomic‐resolution electron microscopy studies clearly identify the magnetic sites of Co substitution in the MoS 2 lattice, forming two distinct types of configurations, namely isolated single dopants and tridopant clusters. Density functional theory (DFT) and model calculations reveal that the observed enhanced VZS arises from an internal magnetic field induced by the tridopant clusters, which couples to the spin, atomic orbital, and valley magnetic moment of carriers from the conduction and valence bands. The present study demonstrates a new method to control the valley pseudospin via magnetic dopants in layered semiconducting materials, paving the way toward magneto‐optical and spintronic devices.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- FG02-09ER46554; AC02-05CH11231
- OSTI ID:
- 1598076
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Journal Issue: 11 Vol. 32; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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