Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS2

Nathawat, J.; Smithe, K. K.  H.; English, C. D.; Yin, S.; Dixit, R.; Randle, M.; Arabchigavkani, N.; Barut, B.; He, K.; Pop, E.; Bird, J. P.

doi:10.1103/PhysRevMaterials.4.014002

Title: Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS₂

Journal Article · Fri Jan 10 00:00:00 EST 2020 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.4.014002· OSTI ID:1593522

Nathawat, J. ^[1]; Smithe, K. K. H. ^[2]; English, C. D. ^[2]; Yin, S. ^[1]; Dixit, R. ^[1]; Randle, M. ^[1]; Arabchigavkani, N. ^[1]; Barut, B. ^[1]; He, K. ^[1]; Pop, E. ^[2]; Bird, J. P. ^[1]

State Univ. of New York (SUNY), Buffalo, NY (United States)
Stanford Univ., CA (United States)

Drift velocity saturation (at some characteristic value,$$v_d^{sat}$$) is a critical process that limits the ultimate current-carrying capacity of semiconductors at high electric fields (~10⁴ V/cm). With the recent emergence of two-dimensional (2D) semiconductors, there is a need to understand the manner in which velocity saturation is impacted when materials are thinned to the monolayer scale. Efforts to determine vsatd are typically hampered, however, by self-heating effects that arise from undesirable energy loss from the active 2D layer to the dielectric substrate that supports it. In this work, we explore this problem for an important 2D semiconductor, namely monolayer molybdenum disulfide (MoS₂). By applying a strategy of rapid (nanosecond duration), single-shot, pulsing, we are able to probe the true hot-carrier dynamics in this material, free of the influence of self-heating of its SiO₂ substrate. Our approach allows us to realize high current densities (~mA/μm) in the MoS₂ layers, representing a significant enhancement over prior studies. We similarly infer values for the saturated drift velocity ($$v_d^{sat}$$ ~ 5-7 x 10⁶ cm s^-1) that are higher than those reported in earlier works, in which the influence of self-heating (and carrier injection into oxide traps) could not be excluded. In fact, our estimates for $$v_d^{sat}$$ are somewhat close to the ideal velocity expected for normal (parabolic) semiconductors. Lastly, since a proper knowledge of this parameter is essential to the design of active electronic and optoelectronic devices, the insight into velocity saturation provided here should provide useful guidance for such efforts.

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Research Organization:: State Univ. of New York (SUNY), Buffalo, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-04ER46180

OSTI ID:: 1593522

Journal Information:: Physical Review Materials, Vol. 4, Issue 1; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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References (34)

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