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Title: MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

Abstract

Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS2 has been one of the main challenges for practical applications. In this paper, we present a MoS2–OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS2 to form a MoS2–OH bilayer structure for growth of large-area monolayer MoS2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS2 layers along the [001] zone axis, promoting the monolayer growth of MoS2, constrains growth of the MoS2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS2 from interface oxidation in air, rendering high-quality MoS2 monolayers with carrier mobility up to ~30 cm2 V–1 s–1. Using this approach, inch-sized uniform monolayer MoS2 has been fabricated on the sapphire and mica and high-quality monolayer MoS2 of single-crystalline domains exceeding 200 μm has beenmore » grown on various substrates including amorphous SiO2 and quartz and crystalline Si, SiC, Si3N4, and graphene Finally, this method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS2 and MoSe2.« less

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [1];  [1];  [3]; ORCiD logo [1];  [4];  [2]; ORCiD logo [3]; ORCiD logo [5]
  1. Soochow University, Suzhou (China)
  2. University College London (United Kingdom)
  3. Chinese Academy of Sciences (CAS), Beijing (China)
  4. University College London (United Kingdom); University of Electronic Science and Technology of China Chengdu, Sichuan (China)
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1526212
Report Number(s):
SAND-2019-6161J
Journal ID: ISSN 0002-7863; 676097
Grant/Contract Number:  
AC04-94AL85000; AC52-06NA25396; NA0003525
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of the American Chemical Society
Additional Journal Information:
Journal Volume: 141; Journal Issue: 13; Journal ID: ISSN 0002-7863
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zhu, Juntong, Xu, Hao, Zou, Guifu, Zhang, Wan, Chai, Ruiqing, Choi, Jinho, Wu, Jiang, Liu, Huiyun, Shen, Guozhen, and Fan, Hongyou. MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates. United States: N. p., 2019. Web. doi:10.1021/jacs.9b00047.
Zhu, Juntong, Xu, Hao, Zou, Guifu, Zhang, Wan, Chai, Ruiqing, Choi, Jinho, Wu, Jiang, Liu, Huiyun, Shen, Guozhen, & Fan, Hongyou. MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates. United States. https://doi.org/10.1021/jacs.9b00047
Zhu, Juntong, Xu, Hao, Zou, Guifu, Zhang, Wan, Chai, Ruiqing, Choi, Jinho, Wu, Jiang, Liu, Huiyun, Shen, Guozhen, and Fan, Hongyou. 2019. "MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates". United States. https://doi.org/10.1021/jacs.9b00047. https://www.osti.gov/servlets/purl/1526212.
@article{osti_1526212,
title = {MoS2 –OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates},
author = {Zhu, Juntong and Xu, Hao and Zou, Guifu and Zhang, Wan and Chai, Ruiqing and Choi, Jinho and Wu, Jiang and Liu, Huiyun and Shen, Guozhen and Fan, Hongyou},
abstractNote = {Due to remarkable electronic property, optical transparency, and mechanical flexibility, monolayer molybdenum disulfide (MoS2) has been demonstrated to be promising for electronic and optoelectronic devices. To date, the growth of high-quality and large-scale monolayer MoS2 has been one of the main challenges for practical applications. In this paper, we present a MoS2–OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates. This approach relies on a layer of hydroxide groups (-OH) that are preferentially attached to the (001) surface of MoS2 to form a MoS2–OH bilayer structure for growth of large-area monolayer MoS2 during the growth process. Specifically, the hydroxide layer impedes vertical growth of MoS2 layers along the [001] zone axis, promoting the monolayer growth of MoS2, constrains growth of the MoS2 monolayer only in the lateral direction into larger area, and effectively reduces sulfur vacancies and defects according to density functional theory calculations. Finally, the hydroxide groups advantageously prevent the MoS2 from interface oxidation in air, rendering high-quality MoS2 monolayers with carrier mobility up to ~30 cm2 V–1 s–1. Using this approach, inch-sized uniform monolayer MoS2 has been fabricated on the sapphire and mica and high-quality monolayer MoS2 of single-crystalline domains exceeding 200 μm has been grown on various substrates including amorphous SiO2 and quartz and crystalline Si, SiC, Si3N4, and graphene Finally, this method provides a new opportunity for the monolayer growth of other two-dimensional transition metal dichalcogenides such as WS2 and MoSe2.},
doi = {10.1021/jacs.9b00047},
url = {https://www.osti.gov/biblio/1526212}, journal = {Journal of the American Chemical Society},
issn = {0002-7863},
number = 13,
volume = 141,
place = {United States},
year = {2019},
month = {3}
}

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Works referencing / citing this record:

Vapor‐phase growth of high‐quality wafer‐scale two‐dimensional materials
journal, September 2019


Electronics from solution-processed 2D semiconductors
journal, January 2019


Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization
journal, August 2019


One-Step CVD Synthesis of Few-Layer SnS 2 /MoS 2 Vertical Heterostructures
journal, October 2019


Ambipolar and Robust WSe 2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides
journal, November 2019


UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS2
journal, December 2019