Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction

Ruggles, T. J.; Yoo, Y. S. J.; Dunlap, B. E.; Crimp, M. A.; Kacher, J.

doi:10.1016/j.ultramic.2019.112927

Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction

Journal Article · Sun Dec 29 23:00:00 EST 2019 · Ultramicroscopy

DOI:https://doi.org/10.1016/j.ultramic.2019.112927· OSTI ID:1593338

Ruggles, T. J. ^[1]; Yoo, Y. S. J. ^[2]; Dunlap, B. E. ^[3]; Crimp, M. A. ^[3]; Kacher, J. ^[2]

National Inst. of Aerospace, Hampton, VA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Georgia Institute of Technology
Georgia Inst. of Technology, Atlanta, GA (United States)
Michigan State Univ., East Lansing, MI (United States)

High resolution electron backscatter diffraction (HREBSD), an SEM-based diffraction technique, may be used to measure the lattice distortion of a crystalline material and to infer the geometrically necessary dislocation content. Uncertainty in the image correlation process used to compare diffraction patterns leads to an uneven distribution of measurement noise in terms of the lattice distortion, which results in erroneous identification of dislocation type and density. This work presents a method of reducing noise in HREBSD dislocation measurements by removing the effect of the most problematic components of the measured distortion. The method is then validated by comparing with TEM analysis of dislocation pile-ups near a twin boundary in austenitic stainless steel and with ECCI analysis near a nano-indentation on a tantalum oligocrystal. Finally, the HREBSD dislocation microscopy technique is able to resolve individual dislocations visible in TEM and ECCI and correctly identify their Burgers vectors.

View Accepted Manuscript (DOE)

Research Organization:: Georgia Inst. of Technology, Atlanta, GA (United States); Michigan State Univ., East Lansing, MI (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: SC0018960; SC0001525; AC04-94AL85000; SC0001525

OSTI ID:: 1593338

Alternate ID(s):: OSTI ID: 1702708
OSTI ID: 1772006
OSTI ID: 1691443

Journal Information:: Ultramicroscopy, Journal Name: Ultramicroscopy Journal Issue: C Vol. 210; ISSN 0304-3991

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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