Patterned probes for high precision 4D-STEM bragg measurements

Zeltmann, Steven E.; Müller, Alexander; Bustillo, Karen C.; Savitzky, Benjamin; Hughes, Lauren; Minor, Andrew M.; Ophus, Colin

doi:10.1016/j.ultramic.2019.112890

Title: Patterned probes for high precision 4D-STEM bragg measurements

Journal Article · Tue Nov 12 00:00:00 EST 2019 · Ultramicroscopy

DOI:https://doi.org/10.1016/j.ultramic.2019.112890· OSTI ID:1582628

Zeltmann, Steven E. ^[1]; Müller, Alexander ^[2]; Bustillo, Karen C. ^[2]; Savitzky, Benjamin ^[2]; Hughes, Lauren ^[2]; Minor, Andrew M. ^[3]; Ophus, Colin ^[2]

Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Center for Electron Microscopy

Nanoscale strain mapping by four-dimensional scanning transmission electron microscopy (4D-STEM) relies on determining the precise locations of Bragg-scattered electrons in a sequence of diffraction patterns, a task which is complicated by dynamical scattering, inelastic scattering, and shot noise. These features hinder accurate automated computational detection and position measurement of the diffracted disks, limiting the precision of measurements of local deformation. Here, we investigate the use of patterned probes to improve the precision of strain mapping. We imprint a "bullseye" pattern onto the probe, by using a binary mask in the probe-forming aperture, to improve the robustness of the peak finding algorithm to intensity modulations inside the diffracted disks. We show that this imprinting leads to substantially improved strain-mapping precision at the expense of a slight decrease in spatial resolution. In experiments on an unstrained silicon reference sample, we observe an improvement in strain measurement precision from 2.7% of the reciprocal lattice vectors with standard probes to 0.3% using bullseye probes for a thin sample, and an improvement from 4.7% to 0.8% for a thick sample. Additionally, we use multislice simulations to explore how sample thickness and electron dose limit the attainable accuracy and precision for 4D-STEM strain measurements.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC02-05CH11231; DMR 1548924

OSTI ID:: 1582628

Alternate ID(s):: OSTI ID: 1597162

Journal Information:: Ultramicroscopy, Vol. 209, Issue C; ISSN 0304-3991

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 31 works

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Multibeam Electron Diffraction Hong, Xuhao; Zeltmann, Steven E.; Savitzky, Benjamin H. arXiv https://doi.org/10.48550/arxiv.2009.09134	text	January 2020

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