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Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode

Journal Article · · IEEE Transactions on Nuclear Science
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  1. Vanderbilt Univ., Nashville, TN (United States)
  2. U.S. Naval Research Lab., Washington, D.C. (United States)
  3. KeyW Corp., Herndon, VA (United States)
  4. Beijing Microelectronics Technology Inst., Beijing (China)
A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. Here, a sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1581984
Report Number(s):
SAND--2019-7444J; 676954
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 67; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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