Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
Journal Article
·
· IEEE Transactions on Nuclear Science
- Vanderbilt Univ., Nashville, TN (United States)
- U.S. Naval Research Lab., Washington, D.C. (United States)
- KeyW Corp., Herndon, VA (United States)
- Beijing Microelectronics Technology Inst., Beijing (China)
A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with experimental two photon absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. Here, a sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion-and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1581984
- Report Number(s):
- SAND--2019-7444J; 676954
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 67; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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