Thermal conductance of aluminum oxy-fluoride passivation layers

Tomko, John A.; Boris, David R.; Rosenberg, Samantha G.; Walton, Scott G.; Hopkins, Patrick E.

doi:10.1063/1.5120028

Thermal conductance of aluminum oxy-fluoride passivation layers

Journal Article · Mon Nov 04 00:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5120028· OSTI ID:1574485

^[1]; Boris, David R. ^[2]; Rosenberg, Samantha G. ^[3]; Walton, Scott G. ^[2]; ^[1]

Univ. of Virginia, Charlottesville, VA (United States)
Naval Research Lab. (NRL), Washington, DC (United States)
Naval Research Lab. (NRL), Washington, DC (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, the thermal properties of plasma-generated aluminum oxyfluoride passivation layers at the surface of aluminum thin films are measured. The oxyfluoride layers are generated using plasmas produced in mixtures of NH₃ and SF₆ to simultaneously remove oxygen and add fluorine to the aluminum surface, an alternative approach to the more conventional two-step methods that utilize HF treatments to remove the native oxide followed by metal-fluoride (e.g., MgF₂, LiF, and AlF₃) thin film deposition that serves to protect the aluminum surface from further oxidation. Here, the change in thermal properties of the layers as a function of plasma processing time is determined. A significant reduction in thermal boundary conductance is measured with the increasing treatment time, which can be related to the increasing fluorine content in the layers. Acoustic reflection measurements suggest this reduced thermal boundary conductance is related to lower bonding strength to aluminum with increasing fluorine.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1574485

Report Number(s):: SAND--2019-13758J; 681349

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 115; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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