Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors

Wang, Dongdong; Fina, Michael; Kim, Suhan; Zhang, Chunmei; Zhang, Ting; Deng, Yonghong; Chen, Kai; Liang, Lijuan; Mao, Samuel S.; Minor, Andrew M.; Liu, Gao

doi:10.3390/ma12152427

Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors

Journal Article · Tue Jul 30 00:00:00 EDT 2019 · Materials

DOI:https://doi.org/10.3390/ma12152427· OSTI ID:1572036

Wang, Dongdong ^[1]; Fina, Michael ^[2]; Kim, Suhan ^[3]; Zhang, Chunmei ^[1]; Zhang, Ting ^[4]; Deng, Yonghong ^[5]; ^[6]; Liang, Lijuan ^[7]; Mao, Samuel S. ^[2]; ^[8]; Liu, Gao ^[3]

Beijing Inst. of Graphic Communication, Beijing (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Beijing Inst. of Technology, Beijing (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); South China Univ. of Technology. Guangzhou (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Xi'an Jiaotong Univ., Xi'an (China)
Beijing Inst. of Graphic Communication, Beijing (China)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)

The trap-assisted charge injection in polyfluorene-poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) model systems with an Al or Al/LiF cathode is investigated. We find that inserting 1.3 nm LiF increases electron and hole injections simultaneously and the increase of holes is greater than electrons. The evolution of internal interfaces within polymer light-emitting diodes is observed by transmission electron microscopy, which reveals that the introduction of LiF improves the interface stability at both the cathode (cathode/polymer) and the anode (indium tin oxide (ITO)/PEDOT:PSS). Above-mentioned experimental results have been compared to the numerical simulations with a revised Davids model and potential physical mechanisms for the trap-assisted charge injection are discussed.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1572036

Journal Information:: Materials, Journal Name: Materials Journal Issue: 15 Vol. 12; ISSN 1996-1944; ISSN MATEG9

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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