Metal oxide semiconductor (MOS) controlled devices and methods of making the same
Patent
·
OSTI ID:1568637
Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.
- Research Organization:
- Monolith Semiconductor Inc., Round Rock, TX (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR0000442
- Assignee:
- Monolith Semiconductor Inc. (Round Rock, TX)
- Patent Number(s):
- 10,361,296
- Application Number:
- 15/636,712
- OSTI ID:
- 1568637
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metal oxide semiconductor (MOS) controlled devices and methods of making the same
Metal oxide semiconductor (MOS) controlled devices and methods of making the same
High voltage semiconductor devices and methods of making the devices
Patent
·
Tue Apr 14 00:00:00 EDT 2020
·
OSTI ID:1650776
Metal oxide semiconductor (MOS) controlled devices and methods of making the same
Patent
·
Tue Apr 19 00:00:00 EDT 2022
·
OSTI ID:1892852
High voltage semiconductor devices and methods of making the devices
Patent
·
Mon Feb 27 23:00:00 EST 2017
·
OSTI ID:1345218