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Title: Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Abstract

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Inventors:
; ; ;
Publication Date:
Research Org.:
Monolith Semiconductor Inc., Round Rock, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1568637
Patent Number(s):
10,361,296
Application Number:
15/636,712
Assignee:
Monolith Semiconductor Inc. (Round Rock, TX)
DOE Contract Number:  
AR0000442
Resource Type:
Patent
Resource Relation:
Patent File Date: 06/29/2017
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING

Citation Formats

Matocha, Kevin, Chowdhury, Sauvik, Chatty, Kiran, and Nowak, John. Metal oxide semiconductor (MOS) controlled devices and methods of making the same. United States: N. p., 2019. Web.
Matocha, Kevin, Chowdhury, Sauvik, Chatty, Kiran, & Nowak, John. Metal oxide semiconductor (MOS) controlled devices and methods of making the same. United States.
Matocha, Kevin, Chowdhury, Sauvik, Chatty, Kiran, and Nowak, John. Tue . "Metal oxide semiconductor (MOS) controlled devices and methods of making the same". United States. https://www.osti.gov/servlets/purl/1568637.
@article{osti_1568637,
title = {Metal oxide semiconductor (MOS) controlled devices and methods of making the same},
author = {Matocha, Kevin and Chowdhury, Sauvik and Chatty, Kiran and Nowak, John},
abstractNote = {Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device. The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}

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Works referenced in this record:

High voltage junction field effect transistor
patent, January 2017


Field effect transistor having a gate dielectric with variable thickness
patent, May 1994


Drift region implant self-aligned to field relief oxide with sidewall dielectric
patent, February 2017


Semiconductor devices comprising getter layers and methods of making and using the same
patent, May 2015


Low Loss Sic Mosfet
patent-application, October 2013