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Title: Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials

Patent ·
OSTI ID:1568410
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Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
10,304,989
Application Number:
15/923,307
OSTI ID:
1568410
Resource Relation:
Patent File Date: 03/16/2018
Country of Publication:
United States
Language:
English

References (2)

Combinatorial methods for developing superstrate thin film solar cells patent September 2014
Methods of growing CdTe-based materials at high rates patent November 2018

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