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Title: Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

Journal Article · · Chemistry of Materials
 [1]; ORCiD logo [2];  [3];  [4];  [5]; ORCiD logo [6];  [6];  [7];  [6];  [8]; ORCiD logo [4]; ORCiD logo [9];  [10];  [6]
  1. Stanford Univ., CA (United States). Dept. of Electrical Engineering; Kwangwoon Univ., Seoul (Korea). Dept. of Electrical Engineering
  2. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Ulsan National Inst. of Science and Technology (Korea). Dept. of Physics
  3. Ulsan National Inst. of Science and Technology (Korea). Dept. of Energy Engineering
  4. Ulsan National Inst. of Science and Technology (Korea). School of Materials Science and Engineering
  5. Queen's Univ., Belfast, Northern Ireland (United Kingdom). School of Mathematics and Physics
  6. Stanford Univ., CA (United States). Dept. of Chemical Engineering
  7. Stanford Univ., CA (United States). Dept. of Chemical Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
  8. Stanford Univ., CA (United States). Dept. of Chemical Engineering; Queen's Univ., Belfast, Northern Ireland (United Kingdom). School of Mathematics and Physics; Queen's Univ., Belfast, Northern Ireland (United Kingdom). School of Chemistry and Chemical Engineering
  9. Ulsan National Inst. of Science and Technology (Korea). Dept. of Energy Engineering; Ulsan National Inst. of Science and Technology (Korea). Dept. of Chemistry
  10. Stanford Univ., CA (United States). Dept. of Electrical Engineering
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Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based on C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm2 V–1 s–1 and a maximal mobility of 2.9 cm2 V–1 s–1 with on/off ratios of 107. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
National Science Foundation (NSF); National Research Foundation of Korea (NRF); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
1.170005.01; 2009-0082580; 2015R1A2A2A01006992; AC02-76SF00515; FOA-0000654-1588; SC0016523; M8407MPH
OSTI ID:
1352885
Journal Information:
Chemistry of Materials, Vol. 29, Issue 5; ISSN 0897-4756
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 42 works
Citation information provided by
Web of Science

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Cited By (11)

Light‐Assisted Charge Propagation in Networks of Organic Semiconductor Crystallites on Hexagonal Boron Nitride journal August 2019
2D Organic Materials for Optoelectronic Applications journal October 2017
The art of two-dimensional soft nanomaterials journal June 2019
Free-Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High-Performance Organic Field-Effect Transistors journal July 2018
Recent Progress and Future Prospects of 2D-Based Photodetectors journal July 2018
Sc 3 N@C 80 and La@C 82 doped graphene for a new class of optoelectronic devices journal January 2020
Das Aufkommen der organischen Einkristallelektronik journal November 2019
The Emergence of Organic Single‐Crystal Electronics journal January 2020
Adsorption and epitaxial growth of small organic semiconductors on hexagonal boron nitride journal July 2019
Structural and electronic properties of adsorbed nucleobases on Si-doped hexagonal boron nitride nanoflake: a computational study journal January 2019
2D–Organic Hybrid Heterostructures for Optoelectronic Applications journal February 2019

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Hexagonal boron nitride
epitaxy of organic molecules
van der Waals heterostructure
organic field-effect transistors