Lithographically defined synthesis of transition metal dichalcogenides

Kemelbay, Aidar; Kuntubek, Aldiyar; Chang, Nicholas; Chen, Christopher T.; Kastl, Christoph; Inglezakis, Vassilis J.; Tikhonov, Alexander; Schwartzberg, Adam M.; Aloni, Shaul; Kuykendall, Tevye R.

doi:10.1088/2053-1583/ab402a

Title: Lithographically defined synthesis of transition metal dichalcogenides

Journal Article · Mon Sep 30 00:00:00 EDT 2019 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ab402a· OSTI ID:1567903

; Kuntubek, Aldiyar; Chang, Nicholas;

;

Abstract Transition metal dichalcogenides (TMDs) promise to revolutionize optoelectronic applications. While monolayer exfoliation and vapor phase growth produce extremely high quality 2D materials, direct fabrication at wafer scale remains a significant challenge. Here, we present a method that we call ‘lateral conversion’, which enables the synthesis of patterned TMD structures, with control over the thickness down to a few layers, at lithographically predefined locations. In this method, chemical conversion of a metal-oxide film to TMD layers proceeds by diffusion of precursor propagating laterally between silica layers, resulting in structures where delicate chalcogenide films are protected from contamination or oxidation. Lithographically patterned WS ₂ structures were synthesized by lateral conversion and analyzed in detail by hyperspectral Raman imaging, scanning electron microscopy and transmission electron microscopy. The rate of conversion was investigated as a function of time, temperature, and thickness of the converted film. In addition, the process was extended to grow patterned MoS ₂ , WSe ₂ , MoSe ₂ structures, and to demonstrate unique WS ₂ /SiO ₂ multilayer structures. We believe this method will be applicable to a variety of additional chalcogenide materials, and enable their incorporation into novel architectures and devices.

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Sponsoring Organization:: USDOE

OSTI ID:: 1567903

Journal Information:: 2D Materials, Journal Name: 2D Materials Vol. 6 Journal Issue: 4; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Cited by: 3 works

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