Investigation of thermal transport degradation in rough Si nanowires
- Federal Inst. of Technology, Zurich (Switzerland)
Thermal transport through $$\langle$$100$$\rangle$$ and $$\langle$$110$$\rangle$$ rough Si nanowires is explored using an atomistic quantum transport approach based on a modified Keating model and the wave function formalism. The thermal conductance, resistance, and conductivity are calculated for different nanowire lengths and the root mean square of the rough surfaces. The simulation results reflect that thermal transport is diffusive in rough nanowires without surrounding oxide layers. Its degradation, as compared to ideal structures, cannot be attributed to phonon localization effects, but to the properties of the phonon band structure. Phonon bands with an almost flat dispersion cannot propagate through disordered structures because of the mode mismatch between adjacent unit cells.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Oak Ridge Leadership Computing Facility (OLCF)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1564851
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 7; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Thermal transport and Matthiessen's rule in ultra-scaled Si nanowires
|
journal | September 2013 |
Roughness and amorphization impact on thermal conductivity of nanofilms and nanowires: Making atomistic modeling more realistic
|
journal | October 2019 |
Low-dimensional phonon transport effects in ultranarrow disordered graphene nanoribbons
|
journal | April 2015 |
Thermal conductivity in porous silicon nanowire arrays
|
journal | January 2012 |
Phonon transport simulations in low-dimensional, disordered graphene nanoribbons
|
conference | July 2015 |
Similar Records
Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors
Scattering in Si-nanowires — Where does it matter?