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Title: Edge states and ballistic transport in zigzag graphene ribbons: The role of SiC polytypes

Journal Article · · Physical Review B
 [1];  [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2];  [3];  [4];  [4];  [1];  [5]
  1. The Georgia Inst. of Technology, Atlanta, GA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Synchrotron SOLEIL, Gif-sur-Yvette (France)
  4. CNRS-Univ. de Lorraine, Vandoeuvre les Nancy (France)
  5. Univ. Paris-Sud, Orsay Cedex (France); Synchrotron SOLEIL, Gif sur Yvette (France)

Zigzag-edge graphene sidewall ribbons grown on 6H-SiC {11¯2n} facet walls are ballistic conductors. Here, it is assumed that graphene sidewall ribbons grown on 4H-SiC {11¯2n} facets would also be ballistic. In this work, we show that SiC polytype indeed matters: ballistic sidewall graphene ribbons only grow on 6H-SiC facets. 4H and 4H-passivated sidewall graphene ribbons are diffusive conductors. Detailed photoemission and microscopy studies show that 6H-SiC sidewall zigzag ribbons are metallic with a pair of n-doped edge states associated with asymmetric edge terminations. In contrast, 4H-SiC zigzag ribbons are strongly bonded to the SiC, severely distorting the ribbon's π bands. H2 passivation of the 4H ribbons returns them to a metallic state but they show no evidence of edge states in their photoemission-derived band structure.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1560407
Alternate ID(s):
OSTI ID: 1545954
Journal Information:
Physical Review B, Vol. 100, Issue 4; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 9 works
Citation information provided by
Web of Science

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Figures / Tables (7)


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