High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition

Amani, Matin; Burke, Robert A.; Ji, Xiang; Zhao, Peida; Lien, Der-Hsien; Taheri, Peyman; Ahn, Geun Ho; Kirya, Daisuke; Ager, Joel W.; Yablonovitch, Eli; Kong, Jing; Dubey, Madan; Javey, Ali

doi:10.1021/acsnano.6b03443

High Luminescence Efficiency in MoS₂ Grown by Chemical Vapor Deposition

Journal Article · Sat Jun 11 00:00:00 EDT 2016 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.6b03443· OSTI ID:1557789

Amani, Matin ^[1]; Burke, Robert A. ^[2]; Ji, Xiang ^[3]; Zhao, Peida ^[4]; Lien, Der-Hsien ^[4]; Taheri, Peyman ^[5]; Ahn, Geun Ho ^[4]; Kirya, Daisuke ^[4]; Ager, Joel W. ^[6]; Yablonovitch, Eli ^[4]; Kong, Jing ^[3]; Dubey, Madan ^[2]; Javey, Ali ^[4]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Office of Scientific and Technical Information (OSTI)
Army Research Lab., Adelphi, MD (United States)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

We report that one of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS₂ and WS₂ monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS₂ samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS₂ plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ~0.1% in the as-grown case to ~30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS₂ films was visible by eye despite the low absorption (5–10%). Lastly, the discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS₂.

View Accepted Manuscript (DOE)

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0001088; AC02-05CH11231; SC0004993

OSTI ID:: 1557789

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 7 Vol. 10; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (41)

Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides Amani, Matin; Taheri, Peyman; Addou, Rafik Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.6b00536	journal	March 2016
Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS ₂ Grown by Vapor Transport McCreary, Amber; Ghosh, Rudresh; Amani, Matin ACS Nano, Vol. 10, Issue 3 https://doi.org/10.1021/acsnano.5b04550	journal	February 2016
Extraordinary Room-Temperature Photoluminescence in Triangular WS ₂ Monolayers Gutiérrez, Humberto R.; Perea-López, Nestor; Elías, Ana Laura Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl3026357	journal	December 2012
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Zhou, Wu; Zou, Xiaolong; Najmaei, Sina Nano Letters, Vol. 13, Issue 6, p. 2615-2622 https://doi.org/10.1021/nl4007479	journal	May 2013
Role of the Seeding Promoter in MoS ₂ Growth by Chemical Vapor Deposition Ling, Xi; Lee, Yi-Hsien; Lin, Yuxuan Nano Letters, Vol. 14, Issue 2 https://doi.org/10.1021/nl4033704	journal	January 2014
Optical Properties and Band Gap of Single- and Few-Layer MoTe ₂ Crystals Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl502557g	journal	October 2014
Large Area Growth and Electrical Properties of p-Type WSe ₂ Atomic Layers Zhou, Hailong; Wang, Chen; Shaw, Jonathan C. Nano Letters, Vol. 15, Issue 1 https://doi.org/10.1021/nl504256y	journal	December 2014
Engineering Light Outcoupling in 2D Materials Lien, Der-Hsien; Kang, Jeong Seuk; Amani, Matin Nano Letters, Vol. 15, Issue 2 https://doi.org/10.1021/nl504632u	journal	January 2015
Observation of Excitonic Rydberg States in Monolayer MoS ₂ and WS ₂ by Photoluminescence Excitation Spectroscopy Hill, Heather M.; Rigosi, Albert F.; Roquelet, Cyrielle Nano Letters, Vol. 15, Issue 5 https://doi.org/10.1021/nl504868p	journal	April 2015
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide Najmaei, Sina; Amani, Matin; Chin, Matthew L. ACS Nano, Vol. 8, Issue 8 https://doi.org/10.1021/nn501701a	journal	July 2014
Tunnel field-effect transistors as energy-efficient electronic switches Ionescu, Adrian M.; Riel, Heike Nature, Vol. 479, Issue 7373 https://doi.org/10.1038/nature10679	journal	November 2011
Monolayer semiconductor nanocavity lasers with ultralow thresholds Wu, Sanfeng; Buckley, Sonia; Schaibley, John R. Nature, Vol. 520, Issue 7545 https://doi.org/10.1038/nature14290	journal	March 2015
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity Kang, Kibum; Xie, Saien; Huang, Lujie Nature, Vol. 520, Issue 7549 https://doi.org/10.1038/nature14417	journal	April 2015
A subthermionic tunnel field-effect transistor with an atomically thin channel Sarkar, Deblina; Xie, Xuejun; Liu, Wei Nature, Vol. 526, Issue 7571 https://doi.org/10.1038/nature15387	journal	September 2015
Hopping transport through defect-induced localized states in molybdenum disulphide Qiu, Hao; Xu, Tao; Wang, Zilu Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms3642	journal	October 2013
Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition Liu, Zheng; Amani, Matin; Najmaei, Sina Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms6246	journal	November 2014
Exploring atomic defects in molybdenum disulphide monolayers Hong, Jinhua; Hu, Zhixin; Probert, Matt Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7293	journal	February 2015
The rise of graphene Geim, A. K.; Novoselov, K. S. Nature Materials, Vol. 6, Issue 3, p. 183-191 https://doi.org/10.1038/nmat1849	journal	March 2007
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers Najmaei, Sina; Liu, Zheng; Zhou, Wu Nature Materials, Vol. 12, Issue 8, p. 754-759 https://doi.org/10.1038/nmat3673	journal	June 2013
Roll-to-roll production of 30-inch graphene films for transparent electrodes Bae, Sukang; Kim, Hyeongkeun; Lee, Youngbin Nature Nanotechnology, Vol. 5, Issue 8, p. 574-578 https://doi.org/10.1038/nnano.2010.132	journal	June 2010
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Valley polarization in MoS2 monolayers by optical pumping Zeng, Hualing; Dai, Junfeng; Yao, Wang Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.95	journal	June 2012
Monolayer excitonic laser Ye, Yu; Wong, Zi Jing; Lu, Xiufang Nature Photonics, Vol. 9, Issue 11 https://doi.org/10.1038/nphoton.2015.197	journal	October 2015
Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures Schnitzer, I.; Yablonovitch, E.; Caneau, C. Applied Physics Letters, Vol. 62, Issue 2 https://doi.org/10.1063/1.109348	journal	January 1993
Very efficient light emission from bulk crystalline silicon Trupke, Thorsten; Zhao, Jianhua; Wang, Aihua Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1572473	journal	May 2003
Chemistry of Si‐SiO ₂ interface trap annealing Reed, Michael L.; Plummer, James D. Journal of Applied Physics, Vol. 63, Issue 12 https://doi.org/10.1063/1.340317	journal	June 1988
Growth-substrate induced performance degradation in chemically synthesized monolayer MoS ₂ field effect transistors Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L. Applied Physics Letters, Vol. 104, Issue 20 https://doi.org/10.1063/1.4873680	journal	May 2014
Degradation of band‐gap photoluminescence in GaAs Guidotti, D.; Hasan, Eram; Hovel, H. J. Applied Physics Letters, Vol. 50, Issue 14 https://doi.org/10.1063/1.98030	journal	April 1987
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides Fang, H.; Battaglia, C.; Carraro, C. Proceedings of the National Academy of Sciences, Vol. 111, Issue 17 https://doi.org/10.1073/pnas.1405435111	journal	April 2014
Tunable band gaps in bilayer transition-metal dichalcogenides Ramasubramaniam, Ashwin; Naveh, Doron; Towe, Elias Physical Review B, Vol. 84, Issue 20 https://doi.org/10.1103/PhysRevB.84.205325	journal	November 2011
Improved quantitative description of Auger recombination in crystalline silicon Richter, Armin; Glunz, Stefan W.; Werner, Florian Physical Review B, Vol. 86, Issue 16 https://doi.org/10.1103/PhysRevB.86.165202	journal	October 2012
Quasiparticle band structures and optical properties of strained monolayer MoS 2 and WS 2 Shi, Hongliang; Pan, Hui; Zhang, Yong-Wei Physical Review B, Vol. 87, Issue 15 https://doi.org/10.1103/PhysRevB.87.155304	journal	April 2013
Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2 Chernikov, Alexey; Berkelbach, Timothy C.; Hill, Heather M. Physical Review Letters, Vol. 113, Issue 7 https://doi.org/10.1103/PhysRevLett.113.076802	journal	August 2014
Inhibited and Enhanced Spontaneous Emission from Optically Thin AlGaAs/GaAs Double Heterostructures Yablonovitch, E.; Gmitter, T. J.; Bhat, R. Physical Review Letters, Vol. 61, Issue 22 https://doi.org/10.1103/PhysRevLett.61.2546	journal	November 1988
Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit Miller, Owen D.; Yablonovitch, Eli; Kurtz, Sarah R. IEEE Journal of Photovoltaics, Vol. 2, Issue 3, p. 303-311 https://doi.org/10.1109/JPHOTOV.2012.2198434	journal	July 2012
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates Martens, Koen; Chui, Chi On; Brammertz, Guy IEEE Transactions on Electron Devices, Vol. 55, Issue 2 https://doi.org/10.1109/TED.2007.912365	journal	February 2008
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium Lee, J.-H.; Lee, E. K.; Joo, W.-J. Science, Vol. 344, Issue 6181, p. 286-289 https://doi.org/10.1126/science.1252268	journal	April 2014
Near-unity photoluminescence quantum yield in MoS2 Amani, M.; Lien, D. -H.; Kiriya, D. Science, Vol. 350, Issue 6264 https://doi.org/10.1126/science.aad2114	journal	November 2015

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Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications Abbas, Omar A.; Zeimpekis, Ioannis; Wang, He Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-58694-0	journal	February 2020
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Related Subjects

36 MATERIALS SCIENCE
MoS2
biexcitonic recombination
chemical vapor deposition
quantum yield
radiative lifetime
transition metal dichalcogenide