Synthetic WSe 2 monolayers with high photoluminescence quantum yield
Abstract
In recent years, there have been tremendous advancements in the growth of monolayer transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). However, obtaining high photoluminescence quantum yield (PL QY), which is the key figure of merit for optoelectronics, is still challenging in the grown monolayers. Specifically, the as-grown monolayers often exhibit lower PL QY than their mechanically exfoliated counterparts. In this work, we demonstrate synthetic tungsten diselenide (WSe 2) monolayers with PL QY exceeding that of exfoliated crystals by over an order of magnitude. PL QY of ~60% is obtained in monolayer films grown by CVD, which is the highest reported value to date for WSe 2 prepared by any technique. The high optoelectronic quality is enabled by the combination of optimizing growth conditions via tuning the halide promoter ratio, and introducing a simple substrate decoupling method via solvent evaporation, which also mechanically relaxes the grown films. The achievement of scalable WSe 2 with high PL QY could potentially enable the emergence of technologically relevant devices at the atomically thin limit.
- Authors:
-
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1560585
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 1; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kim, Hyungjin, Ahn, Geun Ho, Cho, Joy, Amani, Matin, Mastandrea, James P., Groschner, Catherine K., Lien, Der-Hsien, Zhao, Yingbo, Ager, Joel W., Scott, Mary C., Chrzan, Daryl C., and Javey, Ali. Synthetic WSe2 monolayers with high photoluminescence quantum yield. United States: N. p., 2019.
Web. doi:10.1126/sciadv.aau4728.
Kim, Hyungjin, Ahn, Geun Ho, Cho, Joy, Amani, Matin, Mastandrea, James P., Groschner, Catherine K., Lien, Der-Hsien, Zhao, Yingbo, Ager, Joel W., Scott, Mary C., Chrzan, Daryl C., & Javey, Ali. Synthetic WSe2 monolayers with high photoluminescence quantum yield. United States. https://doi.org/10.1126/sciadv.aau4728
Kim, Hyungjin, Ahn, Geun Ho, Cho, Joy, Amani, Matin, Mastandrea, James P., Groschner, Catherine K., Lien, Der-Hsien, Zhao, Yingbo, Ager, Joel W., Scott, Mary C., Chrzan, Daryl C., and Javey, Ali. Wed .
"Synthetic WSe2 monolayers with high photoluminescence quantum yield". United States. https://doi.org/10.1126/sciadv.aau4728. https://www.osti.gov/servlets/purl/1560585.
@article{osti_1560585,
title = {Synthetic WSe2 monolayers with high photoluminescence quantum yield},
author = {Kim, Hyungjin and Ahn, Geun Ho and Cho, Joy and Amani, Matin and Mastandrea, James P. and Groschner, Catherine K. and Lien, Der-Hsien and Zhao, Yingbo and Ager, Joel W. and Scott, Mary C. and Chrzan, Daryl C. and Javey, Ali},
abstractNote = {In recent years, there have been tremendous advancements in the growth of monolayer transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). However, obtaining high photoluminescence quantum yield (PL QY), which is the key figure of merit for optoelectronics, is still challenging in the grown monolayers. Specifically, the as-grown monolayers often exhibit lower PL QY than their mechanically exfoliated counterparts. In this work, we demonstrate synthetic tungsten diselenide (WSe2) monolayers with PL QY exceeding that of exfoliated crystals by over an order of magnitude. PL QY of ~60% is obtained in monolayer films grown by CVD, which is the highest reported value to date for WSe2 prepared by any technique. The high optoelectronic quality is enabled by the combination of optimizing growth conditions via tuning the halide promoter ratio, and introducing a simple substrate decoupling method via solvent evaporation, which also mechanically relaxes the grown films. The achievement of scalable WSe2 with high PL QY could potentially enable the emergence of technologically relevant devices at the atomically thin limit.},
doi = {10.1126/sciadv.aau4728},
url = {https://www.osti.gov/biblio/1560585},
journal = {Science Advances},
issn = {2375-2548},
number = 1,
volume = 5,
place = {United States},
year = {2019},
month = {1}
}
Web of Science
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