Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films

Gao, Min; Tang, Xiao; Dai, Steve; Li, Jiefang; Viehland, D.

doi:10.1063/1.5113720

Title: Depth dependent ferroelectric to incommensurate/commensurate antiferroelectric phase transition in epitaxial lanthanum modified lead zirconate titanate thin films

Journal Article · Mon Aug 12 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5113720· OSTI ID:1557016

;

; Dai, Steve; Li, Jiefang; Viehland, D.

Transmission electron microscopy was used to investigate the coexistence of ferroelectricity (FE) and antiferroelectricity (AFE) in (001) and (011) (Pb0.97, La0.02) (Zr0.95, Ti0.05) O3 (PLZT) epitaxial thin films. The depth resolved selected area electron diffraction (SAED) results revealed that the AFE phase was located in the near interface region, whereas the FE phase was found in the near surface region. A thickness dependent lattice parameter distribution was calculated using the SAED data, and a decrease in the c/a ratio was found to correlate with the transition from AFE to FE stability. Additionally, commensurate and incommensurate modulations in AFE PLZT were identified based on the observation of various superlattice reflections.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: FG02-06ER46290

OSTI ID:: 1557016

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 115 Journal Issue: 7; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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