Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon

Lu, Di; Crossley, Sam; Xu, Ruijuan; Hikita, Yasuyuki; Hwang, Harold Y.

doi:10.1021/acs.nanolett.9b01327

Title: Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon

Journal Article · Tue May 28 00:00:00 EDT 2019 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.9b01327· OSTI ID:1547074

^[1]; Crossley, Sam ^[1];

^[2]; Hikita, Yasuyuki ^[3]; Hwang, Harold Y. ^[2]

Stanford Univ., CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)

Crystalline oxide ferroelectric tunnel junctions allow persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. Yet, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO₃ films grown epitaxially on SrTiO₃ growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.

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Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: GBMF4415; FA9550-18-1-0480; AC02-76SF00515

OSTI ID:: 1547074

Journal Information:: Nano Letters, Vol. 19, Issue 6; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 40 works

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Giant Uniaxial Strain Ferroelectric Domain Tuning in Freestanding PbTiO ₃ Films Han, Lu; Fang, Yanhan; Zhao, Yunqi Advanced Materials Interfaces, Vol. 7, Issue 7 https://doi.org/10.1002/admi.201901604	journal	April 2020
Conductive Oxide Interfaces for Field Effect Devices Kornblum, Lior Advanced Materials Interfaces, Vol. 6, Issue 15 https://doi.org/10.1002/admi.201900480	journal	June 2019
Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier Wen, Zheng; Wu, Di Advanced Materials https://doi.org/10.1002/adma.201904123	journal	October 2019

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