One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon

Cheema, Suraj S.; Shanker, Nirmaan; Hsu, Cheng‐Hsiang; Datar, Adhiraj; Bae, Jongho; Kwon, Daewoong; Salahuddin, Sayeef

doi:10.1002/aelm.202100499

One Nanometer HfO₂-Based Ferroelectric Tunnel Junctions on Silicon

Journal Article · Wed Sep 29 00:00:00 EDT 2021 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202100499· OSTI ID:1829205

^[1]; ^[1]; ^[1]; Datar, Adhiraj ^[1]; ^[1]; Kwon, Daewoong ^[1]; ^[2]

Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploits polarization-dependent tunnel current across a thin ferroelectric barrier. This work integrates FTJs with complementary metal-oxide-semiconductor-compatible Zr-doped HfO₂ (Zr:HfO₂) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO₂ tunnel junctions exhibit large polarization-driven electroresistance (>20 000%), the largest value reported for HfO₂-based FTJs. In addition, due to just a 1 nm ferroelectric barrier, these junctions provide large tunneling current (>1 A cm^-2) at low read voltage, orders of magnitude larger than reported thicker HfO₂-based FTJs. Finally, this proof-of-principle demonstration provides an approach to simultaneously overcome three major drawbacks of prototypical FTJs: a Si-compatible ultrathin ferroelectric, large electroresistance, and large read current for high-speed operation.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: Defense Advanced Research Projects Agency (DARPA); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; AC02-06CH11357; AC02-76SF00515

OSTI ID:: 1829205

Alternate ID(s):: OSTI ID: 1835473
OSTI ID: 1872597
OSTI ID: 1873552
OSTI ID: 1876087
OSTI ID: 1877229

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 6 Vol. 8; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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