CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017

Conference · Mon Jan 01 00:00:00 EST 2018 · Springer Proceedings in Physics

DOI:https://doi.org/10.1007/978-981-13-1316-5_80· OSTI ID:1545782

Ristic, B. ^[1]

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1. European Organization for Nuclear Research (CERN), Geneva (Switzerland); Lancaster Univ. (United Kingdom). Physics Dept.

The high luminosity upgrade of the LHC necessitates a complete exchange of the current ATLAS Inner Tracker for a purely silicon one. Large areas therefore have to be covered by radiation tolerant, low cost and low material budget silicon detectors. New approaches are being explored using CMOS pixel sensors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages and high resistivity wafers for large depletion depths with multiple nested wells, enabling for CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixel detectors with monolithic or hybrid designs in view of their suitability for high trigger rates, fast timing and the high radiation environment at HL-LHC. This paper will discuss recent results of the main candidate technologies and the current developments towards a monolithic solution.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
• Sponsoring Organization: USDOE
• Contributing Organization: ATLAS Collaboration
• OSTI ID: 1545782
• Journal Information: Springer Proceedings in Physics, Vol. 213; Conference: International Conference on Technology and Instrumentation in Particle Physics 2017
• Publisher: Springer, Singapore
• Country of Publication: United States
• Language: English

Related Subjects

ATLAS ITk
CMOS pixel sensors
HV-CMOS
HR-CMOS
CCPD
DMAPS
Radiation hardness