Controlling the surface photovoltage on WSe2 by surface chemical modification

Liu, Ro-Ya; Ozawa, Kenichi; Terashima, Naoya; Natsui, Yuto; Feng, Baojie; Ito, Suguru; Chen, Wei-Chuan; Cheng, Cheng-Maw; Yamamoto, Susumu; Kato, Hiroo; Chiang, Tai-Chang; Matsuda, Iwao

doi:10.1063/1.5026351

Controlling the surface photovoltage on WSe₂ by surface chemical modification

Journal Article · Thu May 24 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5026351· OSTI ID:1540188

Liu, Ro-Ya ^[1]; ^[2]; Terashima, Naoya ^[3]; Natsui, Yuto ^[3]; Feng, Baojie ^[4]; Ito, Suguru ^[5]; Chen, Wei-Chuan ^[6]; Cheng, Cheng-Maw ^[6]; Yamamoto, Susumu ^[5]; Kato, Hiroo ^[3]; Chiang, Tai-Chang ^[7]; ^[5]

Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Tokyo (Japan); DOE/OSTI
Tokyo Inst. of Technology (Japan)
Hirosaki Univ. (Japan)
Hiroshima Univ. (Japan)
Univ. of Tokyo (Japan)
National Synchrotron Radiation Research Center, Hsinchu (Taiwan)
Univ. of Illinois at Urbana-Champaign, IL (United States)

The surface photovoltage (SPV) effect is key to the development of opto-electronic devices such as solar-cells and photo-detectors. For the prototypical transition metal dichalcogenide WSe₂, core level and valence band photoemission measurements show that the surface band bending of pristine cleaved surfaces can be readily modified by adsorption with K (an electron donor) or C₆₀ (an electron acceptor). Time-resolved pump-probe photoemission measurements reveal that the SPV for pristine cleaved surfaces is enhanced by K adsorption, but suppressed by C₆₀ adsorption, and yet the SPV relaxation time is substantially shortened in both cases. Evidently, adsorbate-induced electronic states act as electron-hole recombination centers that shorten the carrier lifetime.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-07ER46383

OSTI ID:: 1540188

Alternate ID(s):: OSTI ID: 1438965

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 112; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng Physical Review B, Vol. 100, Issue 21 https://doi.org/10.1103/physrevb.100.214309	journal	December 2019
Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide Liu, Ro-Ya; Lin, Meng-Kai; Chen, Peng arXiv https://doi.org/10.48550/arxiv.1912.10556	text	January 2019

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