A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions

Clinton, Evan A.; Vadiee, Ehsan; Fabien, Chloe A.M.; Moseley, Michael W.; Gunning, Brendan P.; Doolittle, W. Alan; Fischer, Alec M.; Wei, Yong O.; Xie, Hongen; Ponce, Fernando A.

doi:10.1016/j.sse.2017.06.020

Title: A review of the synthesis of reduced defect density In_xGa_1-xN for all indium compositions

Journal Article · Sat Jun 24 00:00:00 EDT 2017 · Solid-State Electronics

DOI:https://doi.org/10.1016/j.sse.2017.06.020· OSTI ID:1538853

Clinton, Evan A. ^[1];

^[1]; Fabien, Chloe A.M. ^[1]; Moseley, Michael W. ^[1]; Gunning, Brendan P. ^[1]; Doolittle, W. Alan ^[1]; Fischer, Alec M. ^[2]; Wei, Yong O. ^[2]; Xie, Hongen ^[2]; Ponce, Fernando A. ^[2]

Georgia Institute of Technology, Atlanta, GA (United States)
Arizona State University, Tempe, AZ (United States)

A review of metal rich and nitrogen rich (N-rich), low-temperature grown In_xGa_1-xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated In_xGa_1-xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in In_xGa_1-xN are described and are capable of growing In_xGa_1-xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick In_xGa_1-xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. The initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)

Grant/Contract Number:: AR0000470; CA EEC-1041895

OSTI ID:: 1538853

Alternate ID(s):: OSTI ID: 1550203

Journal Information:: Solid-State Electronics, Vol. 136, Issue C; ISSN 0038-1101

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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