Electrical conductivity of high-purity germanium crystals at low temperature

Yang, Gang; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

doi:10.1007/s00339-018-1803-2

Electrical conductivity of high-purity germanium crystals at low temperature

Journal Article · Fri Apr 20 04:00:00 EDT 2018 · Applied Physics. A, Materials Science and Processing

DOI:https://doi.org/10.1007/s00339-018-1803-2· OSTI ID:1537672

Yang, Gang ^[1]; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

DOE/OSTI

Not provided.

Research Organization:: Univ. of South Dakota, Vermillion, SD (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0004768

OSTI ID:: 1537672

Journal Information:: Applied Physics. A, Materials Science and Processing, Journal Name: Applied Physics. A, Materials Science and Processing Journal Issue: 5 Vol. 124; ISSN 0947-8396

Publisher:: Springer

Country of Publication:: United States

Language:: English

References (17)

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Investigation of influential factors on the purification of zone-refined germanium ingot: Investigation of influential factors on the purification of zone-refined germanium ingot Yang, Gang; Govani, Jayesh; Mei, Hao Crystal Research and Technology, Vol. 49, Issue 4 https://doi.org/10.1002/crat.201300418	journal	March 2014
Physics of ultra-pure germanium Haller, Eugene E.; Hansen, William L.; Goulding, Frederick S. Advances in Physics, Vol. 30, Issue 1 https://doi.org/10.1080/00018738100101357	journal	February 1981
Drift Mobilities in Semiconductors. I. Germanium Prince, M. B. Physical Review, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRev.92.681	journal	November 1953
The dc voltage dependence of semiconductor grain‐boundary resistance Pike, G. E.; Seager, C. H. Journal of Applied Physics, Vol. 50, Issue 5 https://doi.org/10.1063/1.326334	journal	May 1979
Electrical properties of lightly doped polycrystalline silicon Lee, J. Y. M.; Cheng, I. C. Journal of Applied Physics, Vol. 53, Issue 1 https://doi.org/10.1063/1.329952	journal	January 1982
Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers Depuydt, Ben; Theuwis, Antoon; Romandic, Igor Materials Science in Semiconductor Processing, Vol. 9, Issue 4-5 https://doi.org/10.1016/j.mssp.2006.08.002	journal	August 2006
High Purity Germanium - Low Temperature Hall Analyses Wichner, R.; Swierkowski, S. P.; Armantrout, G. A. IEEE Transactions on Nuclear Science, Vol. 21, Issue 1 https://doi.org/10.1109/TNS.1974.4327471	journal	January 1974
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Origin and Control of the Dominant Impurities in High-Purity Germanium Haller, E. E.; Hansen, W. L.; Hubbard, G. S. IEEE Transactions on Nuclear Science, Vol. 23, Issue 1 https://doi.org/10.1109/TNS.1976.4328219	journal	January 1976
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Radial and axial impurity distribution in high-purity germanium crystals Yang, Gang; Wang, Guojian; Xiang, Wenchang Journal of Crystal Growth, Vol. 352, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.12.042	journal	August 2012
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Effect of annealing on contact performance and electrical properties of p-type high purity germanium single crystal Yang, Gang; Mei, Dongming; Govani, Jayesh Applied Physics A, Vol. 113, Issue 1 https://doi.org/10.1007/s00339-012-7518-x	journal	February 2013
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