Electrical conductivity of high-purity germanium crystals at low temperature

Yang, Gang; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

doi:10.1007/s00339-018-1803-2

Electrical conductivity of high-purity germanium crystals at low temperature

Journal Article · 20 April 2018 · Applied Physics. A, Materials Science and Processing

DOI:https://doi.org/10.1007/s00339-018-1803-2· OSTI ID:1537672

Yang, Gang; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

Not provided.

Research Organization:: Univ. of South Dakota, Vermillion, SD (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0004768

OSTI ID:: 1537672

Journal Information:: Applied Physics. A, Materials Science and Processing, Vol. 124, Issue 5; ISSN 0947-8396

Publisher:: Springer

Country of Publication:: United States

Language:: English

References (17)

Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers Depuydt, Ben; Theuwis, Antoon; Romandic, Igor Materials Science in Semiconductor Processing, Vol. 9, Issue 4-5 https://doi.org/10.1016/j.mssp.2006.08.002	journal	August 2006
Physics of ultra-pure germanium Haller, Eugene E.; Hansen, William L.; Goulding, Frederick S. Advances in Physics, Vol. 30, Issue 1 https://doi.org/10.1080/00018738100101357	journal	February 1981
Origin and Control of the Dominant Impurities in High-Purity Germanium Haller, E. E.; Hansen, W. L.; Hubbard, G. S. IEEE Transactions on Nuclear Science, Vol. 23, Issue 1 https://doi.org/10.1109/TNS.1976.4328219	journal	January 1976
The drift mobility of electrons and holes in germanium at low temperatures Paige, E. G. S. Journal of Physics and Chemistry of Solids, Vol. 16, Issue 3-4 https://doi.org/10.1016/0022-3697(60)90151-7	journal	November 1960
Electrical Properties of Germanium Semiconductors at Low Temperatures Fritzsche, H. Physical Review, Vol. 99, Issue 2 https://doi.org/10.1103/PhysRev.99.406	journal	July 1955
Some Properties of High Resistivity P -Type Germanium Dunlap, W. C. Physical Review, Vol. 79, Issue 2 https://doi.org/10.1103/PhysRev.79.286	journal	July 1950
Drift Mobilities in Semiconductors. I. Germanium Prince, M. B. Physical Review, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRev.92.681	journal	November 1953
High Purity Germanium - Low Temperature Hall Analyses Wichner, R.; Swierkowski, S. P.; Armantrout, G. A. IEEE Transactions on Nuclear Science, Vol. 21, Issue 1 https://doi.org/10.1109/TNS.1974.4327471	journal	January 1974
Radial and axial impurity distribution in high-purity germanium crystals Yang, Gang; Wang, Guojian; Xiang, Wenchang Journal of Crystal Growth, Vol. 352, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.12.042	journal	August 2012
Investigation of influential factors on the purification of zone-refined germanium ingot: Investigation of influential factors on the purification of zone-refined germanium ingot Yang, Gang; Govani, Jayesh; Mei, Hao Crystal Research and Technology, Vol. 49, Issue 4 https://doi.org/10.1002/crat.201300418	journal	March 2014
Effect of annealing on contact performance and electrical properties of p-type high purity germanium single crystal Yang, Gang; Mei, Dongming; Govani, Jayesh Applied Physics A, Vol. 113, Issue 1 https://doi.org/10.1007/s00339-012-7518-x	journal	February 2013
Electrical properties of lightly doped polycrystalline silicon Lee, J. Y. M.; Cheng, I. C. Journal of Applied Physics, Vol. 53, Issue 1 https://doi.org/10.1063/1.329952	journal	January 1982
Temperature dependence of carrier transport in polycrystalline silicon Lee, J. Y.; Wang, F. Y. Microelectronics Journal, Vol. 17, Issue 5 https://doi.org/10.1016/S0026-2692(86)80133-1	journal	September 1986
The dc voltage dependence of semiconductor grain‐boundary resistance Pike, G. E.; Seager, C. H. Journal of Applied Physics, Vol. 50, Issue 5 https://doi.org/10.1063/1.326334	journal	May 1979
On the mobility of polycrystalline semiconductors Martinez, J.; Piqueras, J. Solid-State Electronics, Vol. 23, Issue 4 https://doi.org/10.1016/0038-1101(80)90196-3	journal	April 1980
The Hall effect in III-V semiconductor assessment Anderson, D. A.; Apsley, N. Semiconductor Science and Technology, Vol. 1, Issue 3 https://doi.org/10.1088/0268-1242/1/3/006	journal	September 1986
A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films Lu, N. C. -C.; Gerzberg, L. IEEE Transactions on Electron Devices, Vol. 30, Issue 2 https://doi.org/10.1109/T-ED.1983.21087	journal	February 1983

Similar Records

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

Journal Article · 2024 · Crystals · OSTI ID:2301719

Bhattarai, Sanjay; Mei, Dongming; Budhathoki, Narayan; +2 more

Characterization of high-purity germanium (Ge) crystals for developing novel Ge detectors

Journal Article · 2020 · Journal of Instrumentation · OSTI ID:1850847

Raut, M. -S.; Mei, H.; Mei, D. -M.; +5 more

Fabrication and characterization of high-purity germanium detectors with amorphous germanium contacts

Journal Article · 2019 · Journal of Instrumentation · OSTI ID:1610756

Meng, X. -H.; Wang, G. -J.; Wagner, M. -D.; +5 more

Related Subjects

Materials Science
Physics

Electrical conductivity of high-purity germanium crystals at low temperature

Citation Formats

References (17)

Similar Records

Related Subjects