Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride

Du, X. Z.; Li, J.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4994070

Title: Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride

Journal Article · Thu Sep 28 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4994070· OSTI ID:1535328

Du, X. Z. ^[1];

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Texas Tech Univ., Lubbock, TX (United States)

The temperature dependence of the energy bandgap of hexagonal boron nitride (h-BN) has been probed via photoluminescence emission characteristics of a donor-to-acceptor pair transition in a 20-layer h-BN epilayer. The results indicate that the universal behavior of bandgap decreasing with temperature is absent in multi-layer h-BN. Below 100 K, the bandgap energy variation with temperature, E_g vs. T, is dominated by the electron-phonon coupling and conforms to the common behavior of redshift with an increase in temperature. At T > 100 K, the bandgap shows an unusual blueshift with temperature, which can be attributed to the unique behavior of the in-plane thermal expansion coefficient of h-BN that becomes negative above around 60 K. Although both graphite and h-BN have negative thermal expansion coefficients in a broad temperature range, graphite has a zero energy bandgap, which makes h-BN a unique semiconductor to exhibit this unusual temperature dependence of the energy bandgap.

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Research Organization:: Texas Tech Univ., Lubbock, TX (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0002927

OSTI ID:: 1535328

Alternate ID(s):: OSTI ID: 1395378

Journal Information:: Applied Physics Letters, Vol. 111, Issue 13; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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References (27)

Temperature dependent analysis of three classes of fluorescence spectra from p-6P nanofiber films Balzer, F.; Pogantsch, A.; Rubahn, H. -G. Journal of Luminescence, Vol. 129, Issue 8 https://doi.org/10.1016/j.jlumin.2009.02.014	journal	August 2009
Arnaud, Lebègue, Rabiller, and Alouani Reply: Arnaud, B.; Lebègue, S.; Rabiller, P. Physical Review Letters, Vol. 100, Issue 18 https://doi.org/10.1103/PhysRevLett.100.189702	journal	May 2008
Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10?297.5�K temperature range Paszkowicz, W.; Pelka, J. B.; Knapp, M. Applied Physics A: Materials Science & Processing, Vol. 75, Issue 3 https://doi.org/10.1007/s003390100999	journal	September 2002
Condensed-Matter Simulation of a Three-Dimensional Anomaly Semenoff, Gordon W. Physical Review Letters, Vol. 53, Issue 26 https://doi.org/10.1103/PhysRevLett.53.2449	journal	December 1984
Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence Du, X. Z.; Frye, C. D.; Edgar, J. H. Journal of Applied Physics, Vol. 115, Issue 5 https://doi.org/10.1063/1.4863823	journal	February 2014
Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure Kubota, Y.; Watanabe, K.; Tsuda, O. Science, Vol. 317, Issue 5840 https://doi.org/10.1126/science.1144216	journal	August 2007
Optical properties of hexagonal boron nitride Zunger, A.; Katzir, A.; Halperin, A. Physical Review B, Vol. 13, Issue 12 https://doi.org/10.1103/PhysRevB.13.5560	journal	June 1976
Hexagonal boron nitride epitaxial layers as neutron detector materials Li, J.; Dahal, R.; Majety, S. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 654, Issue 1 https://doi.org/10.1016/j.nima.2011.07.040	journal	October 2011
Hunting for Monolayer Boron Nitride: Optical and Raman Signatures Gorbachev, Roman V.; Riaz, Ibtsam; Nair, Rahul R. Small, Vol. 7, Issue 4, p. 465-468 https://doi.org/10.1002/smll.201001628	journal	January 2011
Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors Maity, A.; Grenadier, S. J.; Li, J. Applied Physics Letters, Vol. 111, Issue 3 https://doi.org/10.1063/1.4995399	journal	July 2017
Hexagonal Boron Nitride as a New Ultraviolet Luminescent Material and Its Application: Optical Properties of hBN and Its Application Watanabe, Kenji; Taniguchi, Takashi International Journal of Applied Ceramic Technology, Vol. 8, Issue 5 https://doi.org/10.1111/j.1744-7402.2011.02626.x	journal	September 2011
Optical properties of AlN and GaN in elevated temperatures Nam, K. B.; Li, J.; Lin, J. Y. Applied Physics Letters, Vol. 85, Issue 16 https://doi.org/10.1063/1.1806545	journal	October 2004
Layer number dependent optical properties of multilayer hexagonal BN epilayers Du, X. Z.; Uddin, M. R.; Li, J. Applied Physics Letters, Vol. 110, Issue 9 https://doi.org/10.1063/1.4977425	journal	February 2017
Near band-gap photoluminescence properties of hexagonal boron nitride Museur, Luc; Kanaev, Andrei Journal of Applied Physics, Vol. 103, Issue 10 https://doi.org/10.1063/1.2925685	journal	May 2008
Jahn-Teller effect on exciton states in hexagonal boron nitride single crystal Watanabe, Kenji; Taniguchi, Takashi Physical Review B, Vol. 79, Issue 19 https://doi.org/10.1103/PhysRevB.79.193104	journal	May 2009
Band-edge transitions in hexagonal boron nitride epilayers Majety, S.; Cao, X. K.; Li, J. Applied Physics Letters, Vol. 101, Issue 5 https://doi.org/10.1063/1.4742194	journal	July 2012
Realization of highly efficient hexagonal boron nitride neutron detectors Maity, A.; Doan, T. C.; Li, J. Applied Physics Letters, Vol. 109, Issue 7 https://doi.org/10.1063/1.4960522	journal	August 2016
Light scattering study of boron nitride microcrystals Nemanich, R. J.; Solin, S. A.; Martin, Richard M. Physical Review B, Vol. 23, Issue 12, p. 6348-6356 https://doi.org/10.1103/PhysRevB.23.6348	journal	June 1981
Two-dimensional excitons in three-dimensional hexagonal boron nitride Cao, X. K.; Clubine, B.; Edgar, J. H. Applied Physics Letters, Vol. 103, Issue 19 https://doi.org/10.1063/1.4829026	journal	November 2013
Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride Watanabe, Kenji; Taniguchi, Takashi; Niiyama, Takahiro Nature Photonics, Vol. 3, Issue 10 https://doi.org/10.1038/nphoton.2009.167	journal	September 2009
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers Li, J.; Majety, S.; Dahal, R. Applied Physics Letters, Vol. 101, Issue 17 https://doi.org/10.1063/1.4764533	journal	October 2012
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material Dahal, R.; Li, J.; Majety, S. Applied Physics Letters, Vol. 98, Issue 21 https://doi.org/10.1063/1.3593958	journal	May 2011
Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics Majety, S.; Li, J.; Cao, X. K. Applied Physics Letters, Vol. 100, Issue 6 https://doi.org/10.1063/1.3682523	journal	February 2012
Excitons in Boron Nitride Nanotubes: Dimensionality Effects Wirtz, Ludger; Marini, Andrea; Rubio, Angel Physical Review Letters, Vol. 96, Issue 12 https://doi.org/10.1103/PhysRevLett.96.126104	journal	March 2006
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
The origins of near band-edge transitions in hexagonal boron nitride epilayers Du, X. Z.; Li, J.; Lin, J. Y. Applied Physics Letters, Vol. 108, Issue 5 https://doi.org/10.1063/1.4941540	journal	February 2016
Temperature Dependence of the Band Gap of Semiconducting Carbon Nanotubes Capaz, Rodrigo B.; Spataru, Catalin D.; Tangney, Paul Physical Review Letters, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevLett.94.036801	journal	January 2005

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Electroluminescence from h-BN by using Al ₂ O ₃ /h-BN multiple heterostructure Lee, Seung Hee; Jeong, Hokyeong; Kim, Dong Yeong Optics Express, Vol. 27, Issue 14 https://doi.org/10.1364/oe.27.019692	journal	January 2019

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