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Title: Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS 2 Transistors

Abstract

Not provided.

Authors:
; ;  [1]; ; ; ;  [2];  [2];  [2];  [1];  [3]
  1. Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States
  2. Department of Materials Science and Nano-Engineering, Rice University, Houston, Texas 77005, United States
  3. Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Albany, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1534918
DOE Contract Number:  
FG02-04ER46180
Resource Type:
Journal Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 10; Journal Issue: 10; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
Chemistry; Science & Technology - Other Topics; Materials Science

Citation Formats

Matsunaga, Masahiro, Higuchi, Ayaka, He, Guanchen, Yamada, Tetsushi, Krüger, Peter, Ochiai, Yuichi, Gong, Yongji, Vajtai, Robert, Ajayan, Pulickel M., Bird, Jonathan P., and Aoki, Nobuyuki. Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS 2 Transistors. United States: N. p., 2016. Web. doi:10.1021/acsnano.6b05952.
Matsunaga, Masahiro, Higuchi, Ayaka, He, Guanchen, Yamada, Tetsushi, Krüger, Peter, Ochiai, Yuichi, Gong, Yongji, Vajtai, Robert, Ajayan, Pulickel M., Bird, Jonathan P., & Aoki, Nobuyuki. Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS 2 Transistors. United States. doi:10.1021/acsnano.6b05952.
Matsunaga, Masahiro, Higuchi, Ayaka, He, Guanchen, Yamada, Tetsushi, Krüger, Peter, Ochiai, Yuichi, Gong, Yongji, Vajtai, Robert, Ajayan, Pulickel M., Bird, Jonathan P., and Aoki, Nobuyuki. Wed . "Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS 2 Transistors". United States. doi:10.1021/acsnano.6b05952.
@article{osti_1534918,
title = {Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS 2 Transistors},
author = {Matsunaga, Masahiro and Higuchi, Ayaka and He, Guanchen and Yamada, Tetsushi and Krüger, Peter and Ochiai, Yuichi and Gong, Yongji and Vajtai, Robert and Ajayan, Pulickel M. and Bird, Jonathan P. and Aoki, Nobuyuki},
abstractNote = {Not provided.},
doi = {10.1021/acsnano.6b05952},
journal = {ACS Nano},
issn = {1936-0851},
number = 10,
volume = 10,
place = {United States},
year = {2016},
month = {10}
}