Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS 2 Transistors
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States
- Department of Materials Science and Nano-Engineering, Rice University, Houston, Texas 77005, United States
- Japan Science and Technology Agency, PRESTO, 4-1-8 Honcho, Kawaguchi 332-0012, Japan
Not provided.
- Research Organization:
- State Univ. of New York (SUNY), Albany, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- FG02-04ER46180
- OSTI ID:
- 1534918
- Journal Information:
- ACS Nano, Vol. 10, Issue 10; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
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