Thermally Assisted Nonvolatile Memory in Monolayer MoS ₂ Transistors

Journal Article · Thu Sep 15 00:00:00 EDT 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b02905· OSTI ID:1534765

He, G. ^[1]; Ramamoorthy, H. ^[1]; Kwan, C. -P. ^[2]; Lee, Y. -H. ^[1]; Nathawat, J. ^[1]; Somphonsane, R. ^[3]; Matsunaga, M. ^[4]; Higuchi, A. ^[4]; Yamanaka, T. ^[4]; Aoki, N. ^[4]; Gong, Y. ^[5]; Zhang, X. ^[5]; Vajtai, R. ^[5]; Ajayan, P. M. ^[5]; Bird, J. P. ^[6]

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1. Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States
2. Department of Physics, University at Buffalo, The State University of New York, Buffalo, New York 14260-1500, United States
3. Department of Physics, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
4. Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
5. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
6. Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-1900, United States; Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

Not provided.

• Research Organization: State Univ. of New York (SUNY), Albany, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: FG02-04ER46180
• OSTI ID: 1534765
• Journal Information: Nano Letters, Vol. 16, Issue 10; ISSN 1530-6984
• Publisher: American Chemical Society
• Country of Publication: United States
• Language: English

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