Band alignment of front contact layers for high-efficiency CdTe solar cells
- Colorado State Univ., Fort Collins, CO (United States)
- PPG Industries, Cheswick, PA (United States)
- Georgia Institute of Technology, Atlanta, GA (United States)
Resistive oxide materials play an important role in the front contact of CdTe solar cells. The high-resistance transparent (HRT) or “buffer” layer has been used extensively in CdTe thin-film photovoltaics to enable a reduction in CdS thickness while maintaining near-maximum device voltage and fill factor. SnO2- and ZnO-based alloys were tested as HRT layers on a fluorine-doped tin oxide transparent conducting oxide. SnO2-based alloy HRT layers were deposited via atmospheric pressure chemical vapor deposition (APCVD). Alloying ZnO with MgO to create MgxZn1–xO (MZO) via radio-frequency sputter deposition was explored as a way to reduce the electron affinity of ZnO HRT layers. Additionally, to fully understand the behavior of these materials, many devices were fabricated with either no CdS layer, a sublimated CdS layer, or a sputtered, oxygenated CdS layer. MZO layers resulted in high open-circuit voltage and device efficiency even with the complete elimination of the CdS layer. In both HRT systems, controlling electron affinity to optimize front contact band alignment is an important consideration. Band measurements using photoelectron spectroscopy and synchrotron techniques correlate band alignment measurements with efficiency parameters in the design of HRT and CdS layers.
- Research Organization:
- PPG Industries, Pittsburgh, PA (United States); Colorado State Univ., Fort Collins, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- EE0004736; EE0005399; AC02-98CH10886; EE000 4736; EE000 5399
- OSTI ID:
- 1534330
- Alternate ID(s):
- OSTI ID: 1434204
- Journal Information:
- Solar Energy Materials and Solar Cells, Vol. 157, Issue C; ISSN 0927-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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