Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics
MgxZn1-xO (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm2 and efficiency above 16% are demonstrated.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1514844
- Report Number(s):
- NREL/JA-5K00-72393
- Journal Information:
- IEEE Journal of Photovoltaics, Vol. 9, Issue 3; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Recombination and bandgap engineering in CdSeTe/CdTe solar cells
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journal | July 2019 |
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