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Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

Journal Article · · Journal of Crystal Growth
 [1];  [2];  [3];  [4];  [4]
  1. Rochester Institute of Technology, Rochester, NY (United States); DOE/OSTI
  2. Old Dominion University, Norfolk, VA (United States)
  3. Pennsylvania State University, University Park, PA (United States)
  4. Rochester Institute of Technology, Rochester, NY (United States)
+ Show Author Affiliations
Models based on continuum elasticity theory are discussed to calculate the necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained quantum wells (QW) or quantum dots (QD). These models are then expanded to cover material systems (substrates, QW or QD, and SC) composed of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, or InSb, as well as the ternary, quaternary, and higher order material alloys possible in the Al/Ga/In/P/As/Sb systems. SC thickness calculation methods were compared against dynamical scattering simulations and experimental X-ray diffraction measurements of the InAs/GaP/GaAs QD/SC/Substrate superlattices of varying SC thickness. Based on the reduced (but not eliminated) strain present, a further modified strain compensation thickness is calculated to maximize the number of SL repeat units before the onset of misfit dislocations is also calculated. In conclusion, these models have been assembled into a free application on nanoHUB for use by the community.
Research Organization:
Rochester Institute of Technology, Rochester, NY (United States)
Sponsoring Organization:
National Aeronautics and Space Administration (NASA); National Science Foundation (NSF); US Department of Education Graduate Assistance in Areas of National Need (GAANN); USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
FG36-08GO18012
OSTI ID:
1533967
Alternate ID(s):
OSTI ID: 1430551
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 454; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (7)

Figure 1(p. 14)figure Figure 1
Figure 2(p. 15)figure Figure 2
Figure 3(p. 16)figure Figure 3
Figure 4(p. 17)figure Figure 4
Figure 5(p. 18)figure Figure 5
Figure 6(p. 19)figure Figure 6
Table 1(p. 21)table Table 1

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Related Subjects

36 MATERIALS SCIENCE
Crystallography
High resolution X-ray diffraction
Low dimensional structures
Materials Science
Physics
Quantum dots
Quantum wells
Semiconducting III–V materials
Strain compensation