Pinched hysteresis loop in defect-free ferroelectric materials

Xu, Bin; Paillard, Charles; Dkhil, Brahim; Bellaiche, L.

doi:10.1103/physrevb.94.140101

Pinched hysteresis loop in defect-free ferroelectric materials

Journal Article · Mon Oct 24 00:00:00 EDT 2016 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.94.140101· OSTI ID:1532932

Xu, Bin ^[1]; Paillard, Charles ^[2]; Dkhil, Brahim ^[3]; Bellaiche, L. ^[4]

Univ. of Arkansas, Fayetteville, AR (United States); DOE/OSTI
Univ. of Arkansas, Fayetteville, AR (United States); Univ. Paris-Saclay, Chatenay-Malabry (France)
Univ. Paris-Saclay, Chatenay-Malabry (France)
Univ. of Arkansas, Fayetteville, AR (United States)

In addition to the single polarization-versus-electric field hysteresis loop that is characteristic of ferroelectrics and the double hysteresis loop that is known to occur in antiferroelectrics, a third kind of polarization-versus-electric field function has been reported in several systems. This third kind is commonly termed the “pinched” loop due to its unusual shape, and is typically believed to originate from the pinning of domain walls interacting with defects. In this work, using an atomistic effective Hamiltonian scheme, we demonstrate that such a belief has to be broadened since our simulations also yield pinched loops in defect-free ferroelectric materials, as a result of the occurrence of intermediate modulated phases exhibiting an inhomogeneous dipolar pattern leading to the coexistence of both ferroelectric and antiferroelectric orders.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002220

OSTI ID:: 1532932

Alternate ID(s):: OSTI ID: 1329953

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 14 Vol. 94; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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