III-nitride transistor with trench gate
Patent
·
OSTI ID:1532041
A transistor includes a stack of III-nitride semiconductor layers, the stack having a frontside and a backside, a source electrode in contact with the frontside of the stack, a drain electrode in contact with the backside of the stack, a trench extending through a portion of the stack, the trench having a sidewall, and a gate structure formed in the trench, including an AlN layer formed on the sidewall of the trench, an insulating cap layer formed on the AlN layer, and a gate electrode formed on the insulator cap layer and covering the sidewall of the trench.
- Research Organization:
- HRL Laboratories, LLC, Malibu, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AR000450
- Assignee:
- HRL Laboratories, LLC (Malibu, CA)
- Patent Number(s):
- 9,865,725
- Application Number:
- 15/099,390
- OSTI ID:
- 1532041
- Resource Relation:
- Patent File Date: 2016-04-14
- Country of Publication:
- United States
- Language:
- English
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