Low-voltage, N-channel transistors including a hybrid semiconductor-dielectric material
Patent
·
OSTI ID:1531790
Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.
- Research Organization:
- Johns Hopkins Univ., Baltimore, MD (United States)
- Sponsoring Organization:
- USDOE
- Assignee:
- The Johns Hopkins University (Baltimore, MD)
- Patent Number(s):
- 8,963,126
- Application Number:
- 12/743,977
- OSTI ID:
- 1531790
- Country of Publication:
- United States
- Language:
- English
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