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Title: Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

Journal Article · · Physica Status Solidi rrl
 [1];  [2];  [2];  [2];  [2];  [3];  [3]; ORCiD logo [4];  [3]; ORCiD logo [4]
  1. Fudan Univ., Shanghai (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Fudan Univ., Shanghai (China)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)

Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W-1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar solution-processed devices reported in the literature.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Stanford Univ., CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Natural Science Foundation of China (NSFC); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC02-05CH11231; EE0004946; AC02‐76SF00515; DE‐AC02‐76SF00515; AC02-76SF00515; 51471051; 11674061
OSTI ID:
1530330
Alternate ID(s):
OSTI ID: 1413039; OSTI ID: 1579797
Journal Information:
Physica Status Solidi rrl, Vol. 12, Issue 2; ISSN 1862-6254
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 51 works
Citation information provided by
Web of Science

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Surface Plasmon‐Enhanced High‐Performance ZnO/Ni/ZnO Ultraviolet Photodetectors journal April 2020
Cross‐Bar SnO 2 ‐NiO Nanofiber‐Array‐Based Transparent Photodetectors with High Detectivity journal November 2019
Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis journal June 2018
Materials and Designs for Wearable Photodetectors journal February 2019
A Real-Time Wearable UV-Radiation Monitor based on a High-Performance p-CuZnS/n-TiO 2 Photodetector journal August 2018
Growth Kinetics of ZnS Thin Films from a High-Rate Chemical Bath Deposition with Trisodium-Nitrilotriacetate Complexing journal January 2018
Facilitated extrinsic majority carrier depletion and photogenerated exciton dissociation in an annealing-free ZnO:C photodetector journal January 2018
Ultraviolet photodetectors based on wide bandgap oxide semiconductor films journal April 2019
UV photodetector based on polycrystalline SnO2 nanotubes by electrospinning with enhanced performance journal December 2018
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