Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

Nwabunwanne, Solumtochukwu F.; Donaldson, William R.

doi:10.1109/ted.2022.3215641

Title: Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

Journal Article · Mon Oct 31 00:00:00 EDT 2022 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/ted.2022.3215641· OSTI ID:1924856

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Univ. of Rochester, NY (United States)

Efficient and ultrafast (aluminum)-gallium-nitride-based metal-semiconductor-metal (Al_x)Ga_1–xN ultraviolet photodiodes were implemented to investigate the spectral properties of GaN/AlGaN-based photodetectors. Al composition of the GaN templates were varied from 0-% to 30% to demonstrate the impact of Al mole fraction on the cutoff wavelength of these UV photodiodes. Asymmetric metal contact electrodes were fabricated to optimize the external quantum efficiency without compromising their ultrafast photoresponse. Here, the best performing devices exhibited a peak response of 4 V and an oscilloscope limited temporal pulse width of 61 ps at a 20-V bias with a peak spectral responsivity of 36.5 mA/W at 280 nm.

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Research Organization:: Univ. of Rochester, NY (United States). Lab. for Laser Energetics

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003856

OSTI ID:: 1924856

Journal Information:: IEEE Transactions on Electron Devices, Vol. 69, Issue 12; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (22)

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors Nwabunwanne, Solumtochukwu F.; Donaldson, William R. Gallium Nitride Materials and Devices XVII https://doi.org/10.1117/12.2608355	conference	March 2022
AlGaN-based UV photodetectors Monroy, E.; Calle, F.; Pau, J. L. Journal of Crystal Growth, Vol. 230, Issue 3-4 https://doi.org/10.1016/S0022-0248(01)01305-7	journal	September 2001
Tunable UV upgrade on OMEGA EP Kruschwitz, Brian E.; Kwiatkowski, Joseph; Dorrer, Christophe High Power Lasers for Fusion Research V https://doi.org/10.1117/12.2505419	conference	March 2019
High sensitivity graphene-Al₂O₃ passivated InGaAs near-infrared photodetector Yang, Bokuan; Zhao, Yangyang; Chen, Jun Nanotechnology, Vol. 32, Issue 45 https://doi.org/10.1088/1361-6528/ac1a43	journal	August 2021
Observation of collisionless-to-collisional transition in colliding plasma jets with optical Thomson scattering Young, R. P.; Kuranz, C. C.; Froula, D. Physics of Plasmas, Vol. 26, Issue 1 https://doi.org/10.1063/1.5047218	journal	January 2019
Effects of Bias on the Responsivity of GaN Metal–Semiconductor–Metal Photodiodes Monroy, E.; Calle, F.; Muñoz, E. physica status solidi (a), Vol. 176, Issue 1 https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<157::AID-PSSA157>3.0.CO;2-I	journal	November 1999
Response analysis on AlGaN metal–semiconductor–metal photodetectors in a perspective of experiment and theory and the persistent photoconductivity effect Zhao, Yiming; Donaldson, William R. Journal of Materials Research, Vol. 33, Issue 17 https://doi.org/10.1557/jmr.2018.297	journal	August 2018
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si Lyu, Qifeng; Jiang, Huaxing; Lau, Kei May Applied Physics Letters, Vol. 117, Issue 7 https://doi.org/10.1063/5.0011685	journal	August 2020
Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation Duboz, J. Y.; Reverchon, J. L.; Adam, D. Journal of Applied Physics, Vol. 92, Issue 9 https://doi.org/10.1063/1.1499741	journal	November 2002
AlGaN-Based Linear Array for UV Solar-Blind Imaging From 240 to 280 nm Mazzeo, G.; Reverchon, J. -L.; Duboz, J. -Y. IEEE Sensors Journal, Vol. 6, Issue 4 https://doi.org/10.1109/JSEN.2006.877951	journal	August 2006
Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors Chatterjee, Abhishek; Khamari, Shailesh K.; Kumar, R. Superlattices and Microstructures, Vol. 148 https://doi.org/10.1016/j.spmi.2020.106733	journal	December 2020
Characterizing plasma conditions in radiatively heated solid-density samples with x-ray Thomson scattering Saunders, A. M.; Lahmann, B.; Sutcliffe, G. Physical Review E, Vol. 98, Issue 6 https://doi.org/10.1103/PhysRevE.98.063206	journal	December 2018
Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal–Semiconductor–Metal Photodetectors Zhao, Yiming; Donaldson, William Raymond IEEE Transactions on Electron Devices, Vol. 65, Issue 10 https://doi.org/10.1109/TED.2018.2862901	journal	October 2018
The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates Arslan, Engin; Bütün, Serkan; Lisesivdin, S. Bora Journal of Applied Physics, Vol. 103, Issue 10 https://doi.org/10.1063/1.2921832	journal	May 2008
Ultrafast UV AlGaN Metal–Semiconductor–Metal Photodetector With a Response Time Below 25 ps Zhao, Yiming; Donaldson, William R. IEEE Journal of Quantum Electronics, Vol. 56, Issue 3 https://doi.org/10.1109/JQE.2020.2981043	journal	June 2020
Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation Nwabunwanne, Solumtochukwu F.; Donaldson, William R. IEEE Journal of Quantum Electronics, Vol. 57, Issue 6 https://doi.org/10.1109/JQE.2021.3117953	journal	December 2021
AlGaN-based high-performance metal–semiconductor–metal photodetectors Gökkavas, Mutlu; Butun, Serkan; Tut, Turgut Photonics and Nanostructures - Fundamentals and Applications, Vol. 5, Issue 2-3 https://doi.org/10.1016/j.photonics.2007.06.002	journal	October 2007
Cross-Beam Energy Transfer Saturation by Ion Heating Hansen, A. M.; Nguyen, K. L.; Turnbull, D. Physical Review Letters, Vol. 126, Issue 7 https://doi.org/10.1103/PhysRevLett.126.075002	journal	February 2021
Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect Wang, Kai; Qiu, Xinjia; Lv, Zesheng Photonics Research, Vol. 10, Issue 1 https://doi.org/10.1364/PRJ.444444	journal	December 2021
Optimization of All Figure-of-Merits in Well-Aligned GaN Microwire Array Based Schottky UV Photodetectors by Si Doping Wang, Hu; Wang, Xingfu; Luo, Xingjun ACS Photonics, Vol. 6, Issue 8 https://doi.org/10.1021/acsphotonics.9b00363	journal	July 2019
Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^* Xu, Kaikai Journal of Micromechanics and Microengineering, Vol. 31, Issue 5 https://doi.org/10.1088/1361-6439/abf333	journal	April 2021
High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm Gong, X.; Tong, M.; Xia, Y. Science, Vol. 325, Issue 5948 https://doi.org/10.1126/science.1176706	journal	August 2009

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42 ENGINEERING
AlGaN
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ultraviolet (UV)

Title: Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

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