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Title: In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation: Preprint

Abstract

We report on the role of sodium in potential-induced degradation (PWe report on the role of sodium in potential-induced degradation (PID) of Cu(In, Ga)Se2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT) and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of-Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.ID) of Cu(In, Ga)Se2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT)more » and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of-Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.« less

Authors:
 [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1529861
Report Number(s):
NREL/CP-5K00-73121
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 46th IEEE Photovoltaic Specialists Conference (PVSC 46), 16-21 June 2019, Chicago, Illinois
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CIGS; PID; in-situ microscopy; sodium; p-n junction

Citation Formats

Xiao, Chuanxiao, Jiang, Chun Sheng, Harvey, Steven P, Mansfield, Lorelle M, Muzzillo, Christopher, Sulas, Dana, Liu, Jun, Johnston, Steven, and Al-Jassim, Mowafak M. In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation: Preprint. United States: N. p., 2019. Web.
Xiao, Chuanxiao, Jiang, Chun Sheng, Harvey, Steven P, Mansfield, Lorelle M, Muzzillo, Christopher, Sulas, Dana, Liu, Jun, Johnston, Steven, & Al-Jassim, Mowafak M. In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation: Preprint. United States.
Xiao, Chuanxiao, Jiang, Chun Sheng, Harvey, Steven P, Mansfield, Lorelle M, Muzzillo, Christopher, Sulas, Dana, Liu, Jun, Johnston, Steven, and Al-Jassim, Mowafak M. Thu . "In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation: Preprint". United States. https://www.osti.gov/servlets/purl/1529861.
@article{osti_1529861,
title = {In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation: Preprint},
author = {Xiao, Chuanxiao and Jiang, Chun Sheng and Harvey, Steven P and Mansfield, Lorelle M and Muzzillo, Christopher and Sulas, Dana and Liu, Jun and Johnston, Steven and Al-Jassim, Mowafak M},
abstractNote = {We report on the role of sodium in potential-induced degradation (PWe report on the role of sodium in potential-induced degradation (PID) of Cu(In, Ga)Se2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT) and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of-Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.ID) of Cu(In, Ga)Se2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT) and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of-Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {6}
}

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