Probing the band alignment in rectifying SrIrO3/Nb:SrTiO3 heterostructures

Kim, B. S. Y.; Birkhölzer, Y. A.; Feng, X.; Hikita, Y.; Hwang, H. Y.

doi:10.1063/1.5087956

Probing the band alignment in rectifying SrIrO₃/Nb:SrTiO₃ heterostructures

Journal Article · Thu Apr 04 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5087956· OSTI ID:1528890

Kim, B. S. Y. ^[1]; Birkhölzer, Y. A. ^[2]; Feng, X. ^[1]; Hikita, Y. ^[3]; Hwang, H. Y. ^[4]

Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); Univ. of Twente (The Netherlands)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

Here, we have examined the band alignment in SrIrO₃/Nb:SrTiO₃ (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1528890

Alternate ID(s):: OSTI ID: 1505009

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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