Inhomogeneous barrier heights at dipole-controlled SrRuO3/Nb:SrTiO3 Schottky junctions

Yajima, T.; Minohara, M.; Bell, C.; Hwang, H. Y.; Hikita, Y.

doi:10.1063/1.5052712

Inhomogeneous barrier heights at dipole-controlled SrRuO₃/Nb:SrTiO₃ Schottky junctions

Journal Article · Wed Nov 28 00:00:00 EST 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5052712· OSTI ID:1490455

Yajima, T. ^[1]; ^[2]; Bell, C. ^[3]; Hwang, H. Y. ^[4]; Hikita, Y. ^[5]

Univ. of Tokyo (Japan). Dept. of Materials Engineering; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; National Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan). Electronics and Photonics Research Inst.
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Univ. of Bristol (United Kingdom). H. H. Wills Physics Lab.
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials. Dept. of Applied Physics
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

It has recently been shown that the Schottky barrier height (SBH) formed at metal-semiconductor perovskite oxide heterojunctions can be dramatically tuned by the insertion of atomic-scale dipole layers at the interface. However, in idealized form, this would only allow for specific values of the SBH, discretized by the dipole layer thickness. We examine the effect of fractional unit cell LaAlO₃ dipoles inserted between SrRuO₃ and Nb:SrTiO₃ in (001) Schottky junctions, as a function of their in-plane lateral distribution. When the LaAlO₃ dipoles are finely dispersed, we observe uniformly rectifying junctions, with SBHs reflecting the fractional LaAlO₃ coverage. For larger length-scale distributions, the junction characteristics reflect the inhomogeneous combination of regions with and without the interface dipole. The characteristic length scale dividing the two regimes corresponds to the semiconductor depletion width scaled by the dipole potential, determining the effective scale for which the SBH can be continuously tuned.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Lab., Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1490455

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Controlled Current Transport in Pt/Nb:SrTiO ₃ Junctions via Insertion of Uniform Thin Layers of TaO _x Tsurumaki‐Fukuchi, Atsushi; Tsuta, Yusuke; Arita, Masashi physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 7 https://doi.org/10.1002/pssr.201900136	journal	March 2019
Schottky-barrier modulation at germanium/monolayer MoS ₂ heterojunction interface: the roles of passivation and interfacial layer Ma, Xiaolei; Jiang, Xiangwei; Li, Yuan Applied Physics Express, Vol. 13, Issue 2 https://doi.org/10.35848/1882-0786/ab6f2a	journal	February 2020

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36 MATERIALS SCIENCE
I-V characteristics
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transition metal oxides