Luminescence of defects in the structural transformation of layered tin dichalcogenides

Sutter, P.; Komsa, H. -P.; Krasheninnikov, A. V.; Huang, Y.; Sutter, E.

doi:10.1063/1.5007060

Title: Luminescence of defects in the structural transformation of layered tin dichalcogenides

Journal Article · Wed Dec 27 00:00:00 EST 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5007060· OSTI ID:1527164

^[1]; Komsa, H. -P. ^[2]; Krasheninnikov, A. V. ^[3]; Huang, Y. ^[4]; Sutter, E. ^[1]

Univ. of Nebraska, Lincoln, NE (United States)
Aalto Univ., Otaniemi (Finland)
Aalto Univ., Otaniemi (Finland); Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); National Univ. of Science and Technology MISiS, Moscow (Russia)
Chinese Academy of Sciences (CAS), Beijing (China)

Layered tin sulfide semiconductors are both of fundamental interest and attractive for energy conversion applications. Sn sulfides crystallize in several stable bulk phases with different Sn:S ratios (SnS₂, Sn₂S₃, and SnS), which can transform into phases with a lower sulfur concentration by introduction of sulfur vacancies (V_S). How this complex behavior affects the optoelectronic properties remains largely unknown but is of key importance for understanding light-matter interactions in this family of layered materials. In this work, we use the capability to induce V_S and drive a transformation between few-layer SnS₂ and SnS by electron beam irradiation, combined with in-situ cathodoluminescence spectroscopy and ab-initio calculations to probe the role of defects in the luminescence of these materials. In addition to the characteristic band-edge emission of the endpoint structures, our results show emerging luminescence features accompanying the SnS₂ to SnS transformation. Comparison with calculations indicates that the most prominent emission in SnS₂ with sulfur vacancies is not due to luminescence from a defect level but involves recombination of excitons bound to neutral V_S in SnS₂. These results provide insight into the intrinsic and defect-related optoelectronic properties of Sn chalcogenide semiconductors.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016343

OSTI ID:: 1527164

Alternate ID(s):: OSTI ID: 1414972

Journal Information:: Applied Physics Letters, Vol. 111, Issue 26; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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