Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

Sutter, Eli; French, Jacob S.; Balgarkashi, Akshay; Tappy, Nicolas; Fontcuberta i Morral, Anna; Idrobo, Juan Carlos; Sutter, Peter

doi:10.1021/acs.nanolett.9b03783

Title: Single-Crystalline γ-Ga₂S₃ Nanotubes via Epitaxial Conversion of GaAs Nanowires

Journal Article · Mon Nov 04 00:00:00 EST 2019 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.9b03783· OSTI ID:1761749

^[1]; French, Jacob S. ^[1]; Balgarkashi, Akshay ^[2]; Tappy, Nicolas ^[2];

^[2]; Idrobo, Juan Carlos ^[3];

^[1]

Univ. of Nebraska, Lincoln, NE (United States)
Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The chemical transformation of nanowire templates into nanotubes is a promising avenue toward hollow one-dimensional (1D) nanostructures. To date, high-quality single crystalline tubes of nonlayered inorganic crystals have been obtained by solid-state reactions in diffusion couples of nanowires with deposited thin film shells, but this approach presents issues in achieving single-phase tubes with a desired stoichiometry. Chemical transformations with reactants supplied from the gas- or vapor-phase can avoid these complications, allowing single-phase nanotubes to be obtained through self-termination of the reaction once the sacrificial template has been consumed. Here, we demonstrate the realization of this scenario with the transformation of zincblende GaAs nanowires into single-crystalline cubic γ-Ga₂S₃ nanotubes by reaction with sulfur vapor. The conversion proceeds via the formation of epitaxial GaAs-Ga₂S₃ core–shell structures, vacancy injection and aggregation into Kirkendall voids, elastic relaxation of the detached Ga₂S₃ shell, and finally complete incorporation of Ga in a crystalline chalcogenide tube. Absorption and luminescence spectroscopy on individual nanotubes show optoelectronic properties, notably a ~3.1 eV bandgap and intense band-edge and near band-edge emission consistent with high-quality single crystals, along with transitions between gap-states due to the inherent cation-vacancy defect structure of Ga₂S₃. Our work establishes the transformation of nanowires via vapor-phase reactions as a viable approach for forming single-crystalline hollow 1D nanostructures with promising properties.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1761749

Journal Information:: Nano Letters, Vol. 19, Issue 12; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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