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Title: Blue-green emission from epitaxial yet cation-disordered ZnGeN 2 - x O x

Abstract

ZnGeN 2 offers a low-cost alternative to InGaN with the potential for band-gap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here, we investigate the structure and optoelectronic properties of an epitaxial ZnGeN 2-xO x thin film library grown by combinatorial co-sputtering on c-Al 2O 3. Samples exhibit x-ray diffraction patterns and x-ray pole figures characteristic of a wurtzite (cation-disordered) structure with the expected sixfold in-plane symmetry. Transmission electron microscopy reveals a semicoherent interface with periodic dislocations that relieve strain from the large lattice mismatch and also confirms the in-plane and out-of-plane crystallographic orientation. Room-temperature photoluminescence exhibits peaks between 2.4 and 2.8 eV which are consistent with a sharp absorption onset observed by UV-vis spectroscopy. These results demonstrate low-cost synthesis of optically active yet cation disordered ZnGeN 2-xO x, indicating a path toward application as a blue-green emitter.

Authors:
 [1];  [2];  [3];  [2];  [2];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Colorado School of Mines, Golden, CO (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Colorado School of Mines, Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1525768
Alternate Identifier(s):
OSTI ID: 1513314
Report Number(s):
NREL/JA-5K00-72835
Journal ID: ISSN 2475-9953; PRMHAR
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 5; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; optoelectronics; disordered systems; semiconductor compounds; wide band gap systems; epitaxy; photoluminescence; sputtering

Citation Formats

Melamed, Celeste, Tellekamp, Marshall B., Mangum, John S., Perkins, John D., Dippo, Patricia C., Toberer, Eric, and Tamboli, Adele C. Blue-green emission from epitaxial yet cation-disordered ZnGeN2-xOx. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.051602.
Melamed, Celeste, Tellekamp, Marshall B., Mangum, John S., Perkins, John D., Dippo, Patricia C., Toberer, Eric, & Tamboli, Adele C. Blue-green emission from epitaxial yet cation-disordered ZnGeN2-xOx. United States. doi:10.1103/PhysRevMaterials.3.051602.
Melamed, Celeste, Tellekamp, Marshall B., Mangum, John S., Perkins, John D., Dippo, Patricia C., Toberer, Eric, and Tamboli, Adele C. Fri . "Blue-green emission from epitaxial yet cation-disordered ZnGeN2-xOx". United States. doi:10.1103/PhysRevMaterials.3.051602. https://www.osti.gov/servlets/purl/1525768.
@article{osti_1525768,
title = {Blue-green emission from epitaxial yet cation-disordered ZnGeN2-xOx},
author = {Melamed, Celeste and Tellekamp, Marshall B. and Mangum, John S. and Perkins, John D. and Dippo, Patricia C. and Toberer, Eric and Tamboli, Adele C.},
abstractNote = {ZnGeN2 offers a low-cost alternative to InGaN with the potential for band-gap tuning to span the green gap using cation site ordering. The addition of oxygen on the anion site creates an additional degree of electronic tunability. Here, we investigate the structure and optoelectronic properties of an epitaxial ZnGeN2-xOx thin film library grown by combinatorial co-sputtering on c-Al2O3. Samples exhibit x-ray diffraction patterns and x-ray pole figures characteristic of a wurtzite (cation-disordered) structure with the expected sixfold in-plane symmetry. Transmission electron microscopy reveals a semicoherent interface with periodic dislocations that relieve strain from the large lattice mismatch and also confirms the in-plane and out-of-plane crystallographic orientation. Room-temperature photoluminescence exhibits peaks between 2.4 and 2.8 eV which are consistent with a sharp absorption onset observed by UV-vis spectroscopy. These results demonstrate low-cost synthesis of optically active yet cation disordered ZnGeN2-xOx, indicating a path toward application as a blue-green emitter.},
doi = {10.1103/PhysRevMaterials.3.051602},
journal = {Physical Review Materials},
issn = {2475-9953},
number = 5,
volume = 3,
place = {United States},
year = {2019},
month = {5}
}

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Cited by: 3 works
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Works referenced in this record:

Mesoporous zinc germanium oxynitride for CO 2 photoreduction under visible light
journal, January 2012

  • Zhang, Ning; Ouyang, Shuxin; Kako, Tetsuya
  • Chem. Commun., Vol. 48, Issue 9
  • DOI: 10.1039/C2CC16900B

Modification of (Zn 1+ x Ge)(N 2 O x ) Solid Solution as a Visible Light Driven Photocatalyst for Overall Water Splitting
journal, April 2007

  • Lee, Yungi; Teramura, Kentaro; Hara, Michikazu
  • Chemistry of Materials, Vol. 19, Issue 8
  • DOI: 10.1021/cm062980d

A review of focused ion beam milling techniques for TEM specimen preparation
journal, June 1999


Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy
journal, January 2004


Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN 2
journal, January 1998


GaN, AlN, and InN: A review
journal, July 1992

  • Strite, S.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4
  • DOI: 10.1116/1.585897

Growth and device applications of III-nitrides by MBE
journal, July 2001


Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties
journal, May 2001


Zinc Germanium Oxynitride: Influence of the Preparation Method on the Photocatalytic Properties for Overall Water Splitting
journal, April 2009

  • Tessier, Franck; Maillard, Pascal; Lee, Yungi
  • The Journal of Physical Chemistry C, Vol. 113, Issue 19
  • DOI: 10.1021/jp900705g

Optical Properties of (Oxy)Nitride Materials: A Review
journal, March 2013

  • Xie, Rong-Jun; Bert Hintzen, Hubertus T.
  • Journal of the American Ceramic Society, Vol. 96, Issue 3
  • DOI: 10.1111/jace.12197

Exciton photoluminescence and benign defect complex formation in zinc tin nitride
journal, January 2018

  • Fioretti, Angela N.; Pan, Jie; Ortiz, Brenden R.
  • Materials Horizons, Vol. 5, Issue 5
  • DOI: 10.1039/C8MH00415C

Design of nitride semiconductors for solar energy conversion
journal, January 2016

  • Zakutayev, Andriy
  • Journal of Materials Chemistry A, Vol. 4, Issue 18
  • DOI: 10.1039/C5TA09446A

Redox-Mediated Stabilization in Zinc Molybdenum Nitrides
journal, February 2018

  • Arca, Elisabetta; Lany, Stephan; Perkins, John D.
  • Journal of the American Chemical Society, Vol. 140, Issue 12
  • DOI: 10.1021/jacs.7b12861

Cu-Zn disorder and band gap fluctuations in Cu 2 ZnSn(S,Se) 4 : Theoretical and experimental investigations : Cu-Zn disorder and band gap fluctuations in Cu
journal, September 2015

  • Scragg, Jonathan J. S.; Larsen, Jes K.; Kumar, Mukesh
  • physica status solidi (b), Vol. 253, Issue 2
  • DOI: 10.1002/pssb.201552530

Bandgap Tunability in Zn(Sn,Ge)N 2 Semiconductor Alloys
journal, December 2013

  • Narang, Prineha; Chen, Shiyou; Coronel, Naomi C.
  • Advanced Materials, Vol. 26, Issue 8
  • DOI: 10.1002/adma.201304473

Synthesis and Properties of ZnGeN[sub 2]
journal, January 1974

  • Larson, William L.; Maruska, H. Paul; Stevenson, David A.
  • Journal of The Electrochemical Society, Vol. 121, Issue 12
  • DOI: 10.1149/1.2401769

Combinatorial insights into doping control and transport properties of zinc tin nitride
journal, January 2015

  • Fioretti, Angela N.; Zakutayev, Andriy; Moutinho, Helio
  • Journal of Materials Chemistry C, Vol. 3, Issue 42
  • DOI: 10.1039/C5TC02663F

Synthesis of epitaxial GaN single-crystalline film by ultra high vacuum r.f. magnetron sputtering method
journal, July 2005


Characterization and control of ZnGeN2 cation lattice ordering
journal, March 2017


Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials
journal, January 2017

  • Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.
  • Journal of Materials Chemistry A, Vol. 5, Issue 23
  • DOI: 10.1039/C7TA00406K

RF-sputter deposition of Zn–Ge nitride thin films
journal, October 1999


Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
journal, August 2017


Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN 2
journal, January 1999

  • Zhu, L. D.; Norris, P. E.; Bouthillette, L. O.
  • MRS Proceedings, Vol. 607
  • DOI: 10.1557/PROC-607-291

Structure and crystallization of zinc and germanium oxynitrides determined by neutron diffraction
journal, March 1989


Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources
journal, March 2008


Growth and Characterization of ZnGeN2 by Using Remote-Plasma Enhanced Metalorganic Vapor Phase Epitaxy
journal, January 2003


Study of cracking mechanism in GaN/α‐Al 2 O 3 structure
journal, September 1985

  • Itoh, Nobuo; Rhee, Jung Chul; Kawabata, Toshiharu
  • Journal of Applied Physics, Vol. 58, Issue 5
  • DOI: 10.1063/1.336035

Enhancement of photocatalytic activity of (Zn1+xGe)(N2Ox) for visible-light-driven overall water splitting by calcination under nitrogen
journal, May 2008


Step-Controlled Strain Relaxation in the Vicinal Surface Epitaxy of Nitrides
journal, August 2005


Quasiparticle band structure of Zn-IV-N 2 compounds
journal, October 2011

  • Punya, Atchara; Lambrecht, Walter R. L.; van Schilfgaarde, Mark
  • Physical Review B, Vol. 84, Issue 16
  • DOI: 10.1103/PhysRevB.84.165204

Summary of “IAEA intercomparison of IBA software”
journal, April 2008

  • Barradas, N. P.; Arstila, K.; Battistig, G.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 266, Issue 8
  • DOI: 10.1016/j.nimb.2007.10.043

Native point defects and doping in ZnGeN 2
journal, April 2016

  • Skachkov, Dmitry; Punya Jaroenjittichai, Atchara; Huang, Ling-yi
  • Physical Review B, Vol. 93, Issue 15
  • DOI: 10.1103/PhysRevB.93.155202

Preparation et proprietes de ZnGeN2
journal, September 1970